Presentation 1998/5/22
Slective etching of native oxide by remote-plasma-excited anhydrous HF
Hirofumi Yamazaki, Masamitsu Ogasawara, Yutaka Nakazawa, Yoji Saito,
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Abstract(in English) With the trend toward down-scaling of a device size in the integrated circuits, the etching technique of the native oxide becomes important. In this study, we demonstrate etching reaction between the silicon native oxide and anhydrous hydrogen fluoride (AHF) gas with remote-plasma-excite Ar gas. We attempt to improve the selectivity of the oxide etching with respect to silicon by introducing hydrogen into the system.
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Keyword(in English) native oxide / anhydrous hydrogen floride / dry etching / remote-plasma
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Conference Date 1998/5/22(1days)
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Language JPN
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Title (in English) Slective etching of native oxide by remote-plasma-excited anhydrous HF
Sub Title (in English)
Keyword(1) native oxide
Keyword(2) anhydrous hydrogen floride
Keyword(3) dry etching
Keyword(4) remote-plasma
1st Author's Name Hirofumi Yamazaki
1st Author's Affiliation Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University()
2nd Author's Name Masamitsu Ogasawara
2nd Author's Affiliation Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University
3rd Author's Name Yutaka Nakazawa
3rd Author's Affiliation Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University
4th Author's Name Yoji Saito
4th Author's Affiliation Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University
Date 1998/5/22
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Volume (vol) vol.98
Number (no) 60
Page pp.pp.-
#Pages 6
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