| Presentation | 1998/5/22 Surface nitridation process of silicon dioxide by fluorine and excited nitrogen treatment Ukyo Mori, Kana Takigawa, Yoji Saito, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In p-chanel MOSFET with poly silicon gate, boron to the substrate penetration through the thin gate oxide changes threshold voltage. Recently, surface nitridation of silicon oxide is required to suppress boron penetration. We tried surface nitridation of silicon oxide by the exposure to fluorine and to excited nitrogen. In this paper, we show depth profile of nitrogen and fluorine in the nitrided oxide. The bonding states of N and F were investigated by x-ray photoelectron spectroscopy. Moreover, the morphology of the nitrided surfaces was investigated by atomic force microscope |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | oxide / surface nitridation / fluorine / remote plasma / X-ray photoelectron spectroscopy / atomic force microscope |
| Paper # | |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1998/5/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface nitridation process of silicon dioxide by fluorine and excited nitrogen treatment |
| Sub Title (in English) | |
| Keyword(1) | oxide |
| Keyword(2) | surface nitridation |
| Keyword(3) | fluorine |
| Keyword(4) | remote plasma |
| Keyword(5) | X-ray photoelectron spectroscopy |
| Keyword(6) | atomic force microscope |
| 1st Author's Name | Ukyo Mori |
| 1st Author's Affiliation | Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University() |
| 2nd Author's Name | Kana Takigawa |
| 2nd Author's Affiliation | Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University |
| 3rd Author's Name | Yoji Saito |
| 3rd Author's Affiliation | Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University |
| Date | 1998/5/22 |
| Paper # | |
| Volume (vol) | vol.98 |
| Number (no) | 60 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |