Presentation 1998/5/22
Study of surface photo-chemical reactions induced by VUV-light
Takanori Hayakawa, Osamu Hosokawa, Akitaka Yoshigoe, Akihiro Wakahara, Akira Yoshida,
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Abstract(in English) Recently, vacuum ultraviolet(VUV)-light sources are opening up a new prospect in a semiconductor processing technology because of a high photon energy. The effect on the semiconductor surface with VUV-light must be clarified. Though it is of importance to investigate the defect creation and an atomic behavior on the semiconductor surfaces. In this study, undulator radiation and ArF excimer laser were chosen as a light source. Molybdenum disulfide(MoS_2) was used as a substrate. VUV-light induced surface reaction was investigated on the MoS_2 surface using scanning tunneling microscopy(STM). By comparing the results obtained for different photon energies, it was found that VUV-light irradiation modifies the MoS_2 surface and the effect is dependent on the photon energy.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) VUV-light / STM / MoS_2
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Conference Date 1998/5/22(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Study of surface photo-chemical reactions induced by VUV-light
Sub Title (in English)
Keyword(1) VUV-light
Keyword(2) STM
Keyword(3) MoS_2
1st Author's Name Takanori Hayakawa
1st Author's Affiliation Toyohashi University of Technology()
2nd Author's Name Osamu Hosokawa
2nd Author's Affiliation Toyohashi University of Technology
3rd Author's Name Akitaka Yoshigoe
3rd Author's Affiliation Toyohashi University of Technology
4th Author's Name Akihiro Wakahara
4th Author's Affiliation Toyohashi University of Technology
5th Author's Name Akira Yoshida
5th Author's Affiliation Toyohashi University of Technology
Date 1998/5/22
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Volume (vol) vol.98
Number (no) 60
Page pp.pp.-
#Pages 7
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