| Presentation | 1998/5/22 H plasma passivation of MOCVD grown GaAs-on-Si Gang Wang, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The effects of plasma hydrogenation on the optical and electrical properties for GaAs-on-Si epitaxial layers characterized by I-V, PL, and DLTS methods. The hydrogenation provides a significant improvement of the PL properties. The deep level which is related to Si-defect complex was completely passivated, and the effect of the deep level passivation was still retained after annealing at 400℃ for 10 min. This suggests that the hydrogenation may be used to improve the properties of GaAs-on-Si devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs-on Si / H plasma / passivation / C-V / PL / DLTS |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1998/5/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | H plasma passivation of MOCVD grown GaAs-on-Si |
| Sub Title (in English) | |
| Keyword(1) | GaAs-on Si |
| Keyword(2) | H plasma |
| Keyword(3) | passivation |
| Keyword(4) | C-V |
| Keyword(5) | PL |
| Keyword(6) | DLTS |
| 1st Author's Name | Gang Wang |
| 1st Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology() |
| 2nd Author's Name | Tetsuo Soga |
| 2nd Author's Affiliation | Department of Environmental Technology and Urbon Planning, Nagoya Institute of Technology |
| 3rd Author's Name | Takashi Jimbo |
| 3rd Author's Affiliation | Department of Environmental Technology and Urbon Planning, Nagoya Institute of Technology |
| 4th Author's Name | Masayoshi Umeno |
| 4th Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
| Date | 1998/5/22 |
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| Volume (vol) | vol.98 |
| Number (no) | 60 |
| Page | pp.pp.- |
| #Pages | 6 |
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