| Presentation | 1998/5/22 Ga composition dependence of Er-related luminescence in Ga_xIn_<1-x>P:Er(0≦x≦1) T Kawamoto, T Ito, M Ichide, O Watanabe, I Yamakawa, Y Fujiwara, A Nakamura, Y Takeda, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Er-related photoluminescence due to intra-4f shell transitions of Er^<3+>ion has been successfully observed in GaInP doped with Er by organometallic vapor phase epitaxy(OMVPE). In GaInP grown on GaP and InP, the luminescence intensity increased gradually with increasing Ga composition, while the spectral shape was invariant. In GaInP grown on GaAs, the luminescence spectrum was dominated by three emission lines. In a series of GaInP:Er, 4.2K life times of the dominant emission lines appearing around at 0.805eV decreased with the increase in Ga composition. Thermal quenching of the Er-related luminescence became gradually small with increasing Ga composition, i.e., increasing band gap. Based on the temperature dependence of the life times, deep-level properties of Er in excitation mechanism of the 4f shell were discussed in the framework of an energy-transfer model. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | rare-earth-doped semiconductor / Er / GaInP / OMVPE / Thermal quenching / Life time |
| Paper # | |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1998/5/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ga composition dependence of Er-related luminescence in Ga_xIn_<1-x>P:Er(0≦x≦1) |
| Sub Title (in English) | |
| Keyword(1) | rare-earth-doped semiconductor |
| Keyword(2) | Er |
| Keyword(3) | GaInP |
| Keyword(4) | OMVPE |
| Keyword(5) | Thermal quenching |
| Keyword(6) | Life time |
| 1st Author's Name | T Kawamoto |
| 1st Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering Nagoya University() |
| 2nd Author's Name | T Ito |
| 2nd Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering Nagoya University |
| 3rd Author's Name | M Ichide |
| 3rd Author's Affiliation | Center for Integrated Research in Science and Engineering Nagoya University |
| 4th Author's Name | O Watanabe |
| 4th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering Nagoya University |
| 5th Author's Name | I Yamakawa |
| 5th Author's Affiliation | Center for Integrated Research in Science and Engineering Nagoya University |
| 6th Author's Name | Y Fujiwara |
| 6th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering Nagoya University |
| 7th Author's Name | A Nakamura |
| 7th Author's Affiliation | Center for Integrated Research in Science and Engineering Nagoya University |
| 8th Author's Name | Y Takeda |
| 8th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering Nagoya University |
| Date | 1998/5/22 |
| Paper # | |
| Volume (vol) | vol.98 |
| Number (no) | 60 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |