| Presentation | 1998/5/22 DLTS study of 3C-SiC grown on Si substrates : Defects observable above room temperature M Kato, Y Koga, M Ichimura, E Arai, N Yamada, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | n-type 3C-SiC was grown on Si(100) substrates by chemical vapor deposition. In order to observe defects located near the middle of the band gap, the DLTS measurement was carried out in a temperature range from 100K to 600K. A DLTS peak appeared near 150K for all the samples. Some samples showed a peak near room temperature, but the width and position of this peak were different between samples. One of the samples showed a broad peak near 500K. This peak was attributed to deep defects whose activation energy is in the range of 1.07-1.35eV. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 3C-SiC / DLTS / deep level |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1998/5/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | DLTS study of 3C-SiC grown on Si substrates : Defects observable above room temperature |
| Sub Title (in English) | |
| Keyword(1) | 3C-SiC |
| Keyword(2) | DLTS |
| Keyword(3) | deep level |
| 1st Author's Name | M Kato |
| 1st Author's Affiliation | Nagoya Inst.Tech() |
| 2nd Author's Name | Y Koga |
| 2nd Author's Affiliation | Nagoya Inst.Tech |
| 3rd Author's Name | M Ichimura |
| 3rd Author's Affiliation | Nagoya Inst.Tech |
| 4th Author's Name | E Arai |
| 4th Author's Affiliation | Nagoya Inst.Tech |
| 5th Author's Name | N Yamada |
| 5th Author's Affiliation | Nagoya Inst.Tech, Toyota Central Lab. |
| Date | 1998/5/22 |
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| Volume (vol) | vol.98 |
| Number (no) | 60 |
| Page | pp.pp.- |
| #Pages | 6 |
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