Presentation 1998/5/22
Preparation of SiC Thin Film Using Organic Si Material by Remote Plasma CVD Method
Ying-Yu XU, Takahiro MURAMATSU, Toru AOKI, Yoichiro NAKANISHI, Yoshinori HATANAKA,
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Abstract(in English) SiC film was deposited by remote plasma enhanced CVD method using Hexamethyldisilane(HMDS) as a Si monomer source. The composition of deposited film influenced by the kind of plasma gas. Using nitrogen and hydrogen mixture gas as plasma gas, obtained film contained large amount of nitrogen, and when using argon and hydrogen mixture gas, deposited film was a SiC film contained a large hydrogen content. In this research, we found that hydrogen radicals are very active for monomer source that can be solved to precursor for film deposition.
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Keyword(in English) Remote Plasma CVD / Hexamethyldisilane(HMDS) / SiC film / SiC:H film
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Conference Date 1998/5/22(1days)
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Language JPN
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Title (in English) Preparation of SiC Thin Film Using Organic Si Material by Remote Plasma CVD Method
Sub Title (in English)
Keyword(1) Remote Plasma CVD
Keyword(2) Hexamethyldisilane(HMDS)
Keyword(3) SiC film
Keyword(4) SiC:H film
1st Author's Name Ying-Yu XU
1st Author's Affiliation Graduate School of Electronics Science and Technology, Shizuoka Univ.()
2nd Author's Name Takahiro MURAMATSU
2nd Author's Affiliation Research Institute of Electronics, Shizuoka Univ.
3rd Author's Name Toru AOKI
3rd Author's Affiliation Graduate School of Electronics Science and Technology, Shizuoka Univ.
4th Author's Name Yoichiro NAKANISHI
4th Author's Affiliation Graduate School of Electronics Science and Technology, Shizuoka Univ.:Research Institute of Electronics, Shizuoka Univ.
5th Author's Name Yoshinori HATANAKA
5th Author's Affiliation Graduate School of Electronics Science and Technology, Shizuoka Univ.:Research Institute of Electronics, Shizuoka Univ.
Date 1998/5/22
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Volume (vol) vol.98
Number (no) 60
Page pp.pp.-
#Pages 5
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