| Presentation | 1998/5/22 Effects of sapphire substrate nitridation upon GaN grown layers by MOCVD T Ito, H Teshigawara, M Yanagihara, K Ohtsuka, K Kuwahara, M Sumiya, Y Takano, S Fuke, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Effects of the substrate nitridation upon the surface morphology and the crystallinity of subsequent GaN layers were investigated for the GaN growth on sapphire using AlN or GaN buffer layer by MOCVD. When the GaN grown layers were grown on nitrided sapphire substrate, dependency of surface morphology on buffer layer thickness was observed in spite of buffer layer material. GaN films grown on thin AlN and GaN buffer layer had a hexagonal patterned surface. The surface morphology was improved by an increase of buffer layer thickness. For the AlN buffer layer, it was found that the surface morphology was suddenly changed and the crystallinity of GaN grown layer became worse with an increase of buffer layer thickness. Because of both the difference of thermal stability of the GaN grown layer in the H_2 ambient and the result of CAICISS, it was confirmed that hexagonal patterned surface was (0001^^-)N face and mirror surface was (0001)Ga face. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlN / MOCVD / substrate nitridation / buffer layer / polarity |
| Paper # | |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1998/5/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of sapphire substrate nitridation upon GaN grown layers by MOCVD |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlN |
| Keyword(3) | MOCVD |
| Keyword(4) | substrate nitridation |
| Keyword(5) | buffer layer |
| Keyword(6) | polarity |
| 1st Author's Name | T Ito |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University() |
| 2nd Author's Name | H Teshigawara |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 3rd Author's Name | M Yanagihara |
| 3rd Author's Affiliation | Research and Development Division, Sanken Electric Co., Ltd., |
| 4th Author's Name | K Ohtsuka |
| 4th Author's Affiliation | Research and Development Division, Sanken Electric Co., Ltd., |
| 5th Author's Name | K Kuwahara |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 6th Author's Name | M Sumiya |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 7th Author's Name | Y Takano |
| 7th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 8th Author's Name | S Fuke |
| 8th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| Date | 1998/5/22 |
| Paper # | |
| Volume (vol) | vol.98 |
| Number (no) | 60 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |