| Presentation | 1998/5/22 Hetero Epitaxial Growth of Indium Nitride Films on Al_2O_3(11-20) Hisao Saiki, Masato Onishi, Kouji Shimada, Jyun Gemba, Akihiro Wakahara, Akira Yoshida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have made an effort to improve crystalline and electrical properties of InN on Al_2O_3(11-20). For preparing InN films, microwave excited metalorganic vapor phase epitaxy[ME-MOVPE] using trimethylindium[TMIn] and nitrogen remoto plasma was employed. The crystal quality of the InN thin film was characterized with the double-crystal X-ray rocking curve [XRC]. The Full width at half maximam(FWHM) for (0002) diffraction from the InN/Al_2O_3(11-20) thin films became about 110 arcsec. By adapoting a low temparature grown InN bufer layer, the FWHM of XRC was narrower them that of direct growth. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InN / epitaxy / Al_2O_3(11-20) substrate / baffer layer |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1998/5/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Hetero Epitaxial Growth of Indium Nitride Films on Al_2O_3(11-20) |
| Sub Title (in English) | |
| Keyword(1) | InN |
| Keyword(2) | epitaxy |
| Keyword(3) | Al_2O_3(11-20) substrate |
| Keyword(4) | baffer layer |
| 1st Author's Name | Hisao Saiki |
| 1st Author's Affiliation | Sanyo Electric Works Ltd() |
| 2nd Author's Name | Masato Onishi |
| 2nd Author's Affiliation | Toyohashi University of Technology |
| 3rd Author's Name | Kouji Shimada |
| 3rd Author's Affiliation | Toyohashi University of Technology |
| 4th Author's Name | Jyun Gemba |
| 4th Author's Affiliation | Toyohashi University of Technology |
| 5th Author's Name | Akihiro Wakahara |
| 5th Author's Affiliation | Toyohashi University of Technology |
| 6th Author's Name | Akira Yoshida |
| 6th Author's Affiliation | Toyohashi University of Technology |
| Date | 1998/5/22 |
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| Volume (vol) | vol.98 |
| Number (no) | 60 |
| Page | pp.pp.- |
| #Pages | 6 |
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