Presentation	1998/5/22 Lattice Parameter of Melt Grown ZnSe Single Crystals by the Bond Method Haruhiko Udono, Isao Kikuma, Yasumasa Okada,
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Abstract(in English)	We measured the absolute lattice parameters of in-situ annealed ZnSe crystals grown from the melt by the Bond method. Lattice parameters of annealed crystals at T_(A)=1000℃ changed from a value of 0.566902±0.0000025 nm in as-grown crystal and depended on the Zn reservoir temperature, T_(A). When crystals were annealed at low T_(A)(<600℃), the lattice parameter decreased by 7x10^<-6> nm, whereas the lattice parameter increased by 1.2x10^<-5> nm at high T_(A)(≧750℃). When the crystal annealed at T_(A)=450℃, the volume density was decreased and the resistivity become high. These results suggest that the decrease of the lattice parameter at low T_(A) was due to increase of the Zn vacancy in the crystal.
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Keyword(in English)	lattice parameter / Bond method / ZnSe / melt growth / density / anneal
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Committee	ED
Conference Date	1998/5/22(1days)
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Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
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Title (in English)	Lattice Parameter of Melt Grown ZnSe Single Crystals by the Bond Method
Sub Title (in English)
Keyword(1)	lattice parameter
Keyword(2)	Bond method
Keyword(3)	ZnSe
Keyword(4)	melt growth
Keyword(5)	density
Keyword(6)	anneal
1st Author's Name	Haruhiko Udono
1st Author's Affiliation	Dept.of Electrical & Electronics, Fac.of Engineering, IBARAKI Univ.,()
2nd Author's Name	Isao Kikuma
2nd Author's Affiliation	Dept.of Electrical & Electronics, Fac.of Engineering, IBARAKI Univ.,
3rd Author's Name	Yasumasa Okada
3rd Author's Affiliation	Electrotechnical Laboratory, Fac.of Engineering, IBARAKI Univ.,
Date	1998/5/22
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Volume (vol)	vol.98
Number (no)	60
Page	pp.pp.-
#Pages	8
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