Presentation 1998/5/22
Characteristics of Dry Etching in CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy
Toru Nimura, Yoshihiko Asai, Fumihito Inukai, Noriaki Araki, Mitsuyoshi Miyata, Kazuhito Yasuda,
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Abstract(in English) Characteristics of ECR dry etching in CdTe layers have been studied using CH_4, H_2, Ar, and N_2. Etching rates decrease with increase of N_2 supply. Etch rate also increases with CH_4 flow. But the rate decreases at excess supply of CH_4. Etching was also possible using H_2 and Ar. Etching mechanisms were discussed. The influences of etching on CdTe layer was also evaluated.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ECR plasma etching / etching gases / CdTe / electrical properties
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Conference Date 1998/5/22(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characteristics of Dry Etching in CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy
Sub Title (in English)
Keyword(1) ECR plasma etching
Keyword(2) etching gases
Keyword(3) CdTe
Keyword(4) electrical properties
1st Author's Name Toru Nimura
1st Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology()
2nd Author's Name Yoshihiko Asai
2nd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
3rd Author's Name Fumihito Inukai
3rd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
4th Author's Name Noriaki Araki
4th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
5th Author's Name Mitsuyoshi Miyata
5th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
6th Author's Name Kazuhito Yasuda
6th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
Date 1998/5/22
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Volume (vol) vol.98
Number (no) 60
Page pp.pp.-
#Pages 7
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