Presentation | 1998/5/22 Characteristics of Iodine doping in CdZnTe layers grown by metalorganic vapor phase epitxy(II) Fumihito Inukai, Yoshihiko Asai, Toru Nimura, Mitsuyoshi Miyata, Noriaki Araki, Kazuhito Yasuda, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Characteristics of Iodine doping in CdTe and ZnTe layers grown on GaAs and CdZnTe substrates by metalorganic vaper phase epitaxy have been studied in the growth temperture range from 375 to 450℃. Doped layers become high resistivity grown above 450℃. The mechanisms of high resistivity have studied by Hall effect measurements at 300K and photoluminescenc at 4.2K. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MOVPE / CdTe / ZnTe / iodine doping / photoluminescenc |
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Committee | ED |
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Conference Date | 1998/5/22(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characteristics of Iodine doping in CdZnTe layers grown by metalorganic vapor phase epitxy(II) |
Sub Title (in English) | |
Keyword(1) | MOVPE |
Keyword(2) | CdTe |
Keyword(3) | ZnTe |
Keyword(4) | iodine doping |
Keyword(5) | photoluminescenc |
1st Author's Name | Fumihito Inukai |
1st Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology() |
2nd Author's Name | Yoshihiko Asai |
2nd Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
3rd Author's Name | Toru Nimura |
3rd Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
4th Author's Name | Mitsuyoshi Miyata |
4th Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
5th Author's Name | Noriaki Araki |
5th Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
6th Author's Name | Kazuhito Yasuda |
6th Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
Date | 1998/5/22 |
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Volume (vol) | vol.98 |
Number (no) | 60 |
Page | pp.pp.- |
#Pages | 7 |
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