Presentation 1998/5/22
Characteristics of Iodine doping in CdZnTe layers grown by metalorganic vapor phase epitxy(II)
Fumihito Inukai, Yoshihiko Asai, Toru Nimura, Mitsuyoshi Miyata, Noriaki Araki, Kazuhito Yasuda,
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Abstract(in English) Characteristics of Iodine doping in CdTe and ZnTe layers grown on GaAs and CdZnTe substrates by metalorganic vaper phase epitaxy have been studied in the growth temperture range from 375 to 450℃. Doped layers become high resistivity grown above 450℃. The mechanisms of high resistivity have studied by Hall effect measurements at 300K and photoluminescenc at 4.2K.
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Keyword(in English) MOVPE / CdTe / ZnTe / iodine doping / photoluminescenc
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Conference Date 1998/5/22(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Characteristics of Iodine doping in CdZnTe layers grown by metalorganic vapor phase epitxy(II)
Sub Title (in English)
Keyword(1) MOVPE
Keyword(2) CdTe
Keyword(3) ZnTe
Keyword(4) iodine doping
Keyword(5) photoluminescenc
1st Author's Name Fumihito Inukai
1st Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology()
2nd Author's Name Yoshihiko Asai
2nd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
3rd Author's Name Toru Nimura
3rd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
4th Author's Name Mitsuyoshi Miyata
4th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
5th Author's Name Noriaki Araki
5th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
6th Author's Name Kazuhito Yasuda
6th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
Date 1998/5/22
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Volume (vol) vol.98
Number (no) 60
Page pp.pp.-
#Pages 7
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