Presentation 1998/5/22
CdZnTe Epitaxial Growth and Doping Method by Remote Plasma Enhanced Metal Organic Chemical Vapor Deposition
Daiji Noda, Toru Aoki, Yoichiro Nakanishi, Yoshinori Hatanaka,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Cadmium Zinc telluride (CdZnTe) has been grown by remote plasma enhanced metal organic chemical vapor deposition (RPE-MOCVD). Epitaxial growth of CdZnTe films were observed when associated with hydrogen radicals. The p-type CdZnTe films were obtained when a mixture of H_2 and N_2, or NH_3 gas was introduced into the plasma. After annealing at 600℃ in the ambient of nitrogen for 10 minutes, the carrier concentration and resistivity of CdZnTe films are evaluated as 1.2×10^<19>cm^<-3> and 3.7×10^<-2>Ωcm, respectively.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Remote plasma enhanced MOCVD / CdZnTe / Nitrogen radical doping / p-CdZnTe
Paper #
Date of Issue

Conference Information
Committee ED
Conference Date 1998/5/22(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) CdZnTe Epitaxial Growth and Doping Method by Remote Plasma Enhanced Metal Organic Chemical Vapor Deposition
Sub Title (in English)
Keyword(1) Remote plasma enhanced MOCVD
Keyword(2) CdZnTe
Keyword(3) Nitrogen radical doping
Keyword(4) p-CdZnTe
1st Author's Name Daiji Noda
1st Author's Affiliation Gradate School of Electronic Science and Technology, Shizuoka University()
2nd Author's Name Toru Aoki
2nd Author's Affiliation Gradate School of Electronic Science and Technology, Shizuoka University
3rd Author's Name Yoichiro Nakanishi
3rd Author's Affiliation Gradate School of Electronic Science and Technology, Shizuoka University:Research Institute of Electronics, Shizuika University
4th Author's Name Yoshinori Hatanaka
4th Author's Affiliation Gradate School of Electronic Science and Technology, Shizuoka University:Research Institute of Electronics, Shizuika University
Date 1998/5/22
Paper #
Volume (vol) vol.98
Number (no) 60
Page pp.pp.-
#Pages 6
Date of Issue