| Presentation | 1994/1/20 Application of SrTiO_3 thin film capacitor for GaAs-ICs by using the low-temperature RF sputtering method. Mitsuru Nishitsuji, Akiyoshi Tamura, Taketo Kunihisa, Kazuhiro Yahata, Munehiro Shibuya, Masatoshi Kitagawa, Takashi Hirao, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed a new GaAs-IC process technology using the low- temperature RF sputtered SrTiO_3 thin film capacitors which were combined with WSi-gate self-aligned FETs(SAFETs).The SrTiO_3 film with high dielectric constant(ε_r)over 100 and low leakage current density under 10^-6> A, cm_2 at IMV/cm was obtained by RF sputtering method with the temperature range of 200-300℃. This SrTiO_3 capacitor exibited no ε_r change and low insertion losses up to 3.0GHz.By integrating these on-chip SrTiO_3 bypass- capacitors into GaAs-IC,the parasitic inductance of the source-to- ground interconnection is successfully reduced,and the enhanced gain characteristic was obtained for self-biased amplifier circuit. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs-IC / SrTiO_3 / low temperature RF sputtering method / bypass-capacitor / upper electrode |
| Paper # | ED93-165,MW93-122,ICD93-180 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1994/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Application of SrTiO_3 thin film capacitor for GaAs-ICs by using the low-temperature RF sputtering method. |
| Sub Title (in English) | |
| Keyword(1) | GaAs-IC |
| Keyword(2) | SrTiO_3 |
| Keyword(3) | low temperature RF sputtering method |
| Keyword(4) | bypass-capacitor |
| Keyword(5) | upper electrode |
| 1st Author's Name | Mitsuru Nishitsuji |
| 1st Author's Affiliation | Semiconductor Research Center,Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Akiyoshi Tamura |
| 2nd Author's Affiliation | Semiconductor Research Center,Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Taketo Kunihisa |
| 3rd Author's Affiliation | Semiconductor Research Center,Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Kazuhiro Yahata |
| 4th Author's Affiliation | Semiconductor Research Center,Matsushita Electric Industrial Co., Ltd. |
| 5th Author's Name | Munehiro Shibuya |
| 5th Author's Affiliation | Central Research Laboratory,Matsushita Electric Industrial Co.,Ltd. |
| 6th Author's Name | Masatoshi Kitagawa |
| 6th Author's Affiliation | Central Research Laboratory,Matsushita Electric Industrial Co.,Ltd. |
| 7th Author's Name | Takashi Hirao |
| 7th Author's Affiliation | Central Research Laboratory,Matsushita Electric Industrial Co.,Ltd. |
| Date | 1994/1/20 |
| Paper # | ED93-165,MW93-122,ICD93-180 |
| Volume (vol) | vol.93 |
| Number (no) | 416 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |