Presentation 1994/1/20
AlGaAs/GaAs Heterojunction Bipolar Transistorw with Buried SiO_2 in the Extrinsic Collector
Kazuhiro Mochizuki, Tohru Nakamura, Tomonori Tanoue, Hiroshi Masuda, Masatada Horiuchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This report presents a novel heterojunction bipolar transistor(HBT)structure with buried SiO_2 in the extrinsic collector.AlGaAs, molecular beam epitaxy.Gummel plots shows that the collector current of these HBTs is almost the same as that of conventional HBTs.The base-collector capacitance C_BC> is reduced to 35% for HBTs with an emitter area of 4×4μm^2.In order to realize one-dime nsional HBTs which minimizes C_BC>,p-type polycrystalline GaAs with low resistivity has been developed by heavy doping of Be.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) heterojunction bipolar transistor / bose-collector capacitance / dielectric film
Paper # ED93-158,MW93-115,ICD93-173
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Committee ED
Conference Date 1994/1/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) AlGaAs/GaAs Heterojunction Bipolar Transistorw with Buried SiO_2 in the Extrinsic Collector
Sub Title (in English)
Keyword(1) heterojunction bipolar transistor
Keyword(2) bose-collector capacitance
Keyword(3) dielectric film
1st Author's Name Kazuhiro Mochizuki
1st Author's Affiliation Central Research Laboratory,Hitachi Ltd.()
2nd Author's Name Tohru Nakamura
2nd Author's Affiliation Central Research Laboratory,Hitachi Ltd.
3rd Author's Name Tomonori Tanoue
3rd Author's Affiliation Central Research Laboratory,Hitachi Ltd.
4th Author's Name Hiroshi Masuda
4th Author's Affiliation Central Research Laboratory,Hitachi Ltd.
5th Author's Name Masatada Horiuchi
5th Author's Affiliation Central Research Laboratory,Hitachi Ltd.
Date 1994/1/20
Paper # ED93-158,MW93-115,ICD93-173
Volume (vol) vol.93
Number (no) 416
Page pp.pp.-
#Pages 6
Date of Issue