Presentation 1994/1/19
2.5Gb/s 8×8 self-routing switch LSIs using GaAs MESFETs
Hiroyuki Yamada, Masanori Tsunotani, Fumiyasu Kaneyama, Shouhei Seki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) 2.5Gb, s 8×8 self-routing switch LSIs using 0.5μm gate GaAs MES FET technology have been developed for broadband integrated servives digital network(B-ISDN).This switch system consists of three LSIs,which are a switching network LSI for exchanging packetcells,a ″NEMAWASI″ network LSI for detecting the cells havi ng the same output port adress and a demultiplexer LSI for converting cell streams of each output port of the switching network LSI to eight parallel streams.These LSIs are mounted in a 520pin package of a multi-chip module.The total logic lates and the power dissipation of this switch system are 13.3k and 24W, respectively.As the results,this switch has shown the full operation at a data rate up to 2.5Gb/s.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) self-routing switch / GaAs LSI / MESFET
Paper # ED93-154,MW93-111,ICD93-169
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Committee ED
Conference Date 1994/1/19(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 2.5Gb/s 8×8 self-routing switch LSIs using GaAs MESFETs
Sub Title (in English)
Keyword(1) self-routing switch
Keyword(2) GaAs LSI
Keyword(3) MESFET
1st Author's Name Hiroyuki Yamada
1st Author's Affiliation Oki Electric Industry Co.Ltd.()
2nd Author's Name Masanori Tsunotani
2nd Author's Affiliation Oki Electric Industry Co.Ltd.
3rd Author's Name Fumiyasu Kaneyama
3rd Author's Affiliation Oki Electric Industry Co.Ltd.
4th Author's Name Shouhei Seki
4th Author's Affiliation Oki Electric Industry Co.Ltd.
Date 1994/1/19
Paper # ED93-154,MW93-111,ICD93-169
Volume (vol) vol.93
Number (no) 415
Page pp.pp.-
#Pages 6
Date of Issue