Presentation 1993/11/18
Fabrication Process of Electron Device(HEMT)by STM
Kazuhiko Matsumoto, Shuu Takahashi, Atsushi Ando, Masami Ishii,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Scanning Tunneling Microscope(STM)was used for the fabrication process of the electron device and High Electron Mobility Transistor(HEMT)was successfully fabricated.The tip of the STM was made of gold.When the pulse bias was applied between the tip and the substrate with DC tunneling bias,the gold was emitted from the tip to the substrate and forms the fine gold line.Using the gold fine line as the gate of the FET,HEMT was fabricated.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) STM / AFM / HEMT / GaAs/GaAlAs / STM process
Paper # ED93-119,CPM93-90
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Committee ED
Conference Date 1993/11/18(1days)
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Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication Process of Electron Device(HEMT)by STM
Sub Title (in English)
Keyword(1) STM
Keyword(2) AFM
Keyword(3) HEMT
Keyword(4) GaAs/GaAlAs
Keyword(5) STM process
1st Author's Name Kazuhiko Matsumoto
1st Author's Affiliation Electortechnical Laboratory()
2nd Author's Name Shuu Takahashi
2nd Author's Affiliation Tokai University
3rd Author's Name Atsushi Ando
3rd Author's Affiliation Electrotechnical Laboratory
4th Author's Name Masami Ishii
4th Author's Affiliation Electrotechnical Laboratory
Date 1993/11/18
Paper # ED93-119,CPM93-90
Volume (vol) vol.93
Number (no) 325
Page pp.pp.-
#Pages 6
Date of Issue