Presentation | 1993/11/18 Fabrication Process of Electron Device(HEMT)by STM Kazuhiko Matsumoto, Shuu Takahashi, Atsushi Ando, Masami Ishii, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Scanning Tunneling Microscope(STM)was used for the fabrication process of the electron device and High Electron Mobility Transistor(HEMT)was successfully fabricated.The tip of the STM was made of gold.When the pulse bias was applied between the tip and the substrate with DC tunneling bias,the gold was emitted from the tip to the substrate and forms the fine gold line.Using the gold fine line as the gate of the FET,HEMT was fabricated. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | STM / AFM / HEMT / GaAs/GaAlAs / STM process |
Paper # | ED93-119,CPM93-90 |
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Conference Information | |
Committee | ED |
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Conference Date | 1993/11/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication Process of Electron Device(HEMT)by STM |
Sub Title (in English) | |
Keyword(1) | STM |
Keyword(2) | AFM |
Keyword(3) | HEMT |
Keyword(4) | GaAs/GaAlAs |
Keyword(5) | STM process |
1st Author's Name | Kazuhiko Matsumoto |
1st Author's Affiliation | Electortechnical Laboratory() |
2nd Author's Name | Shuu Takahashi |
2nd Author's Affiliation | Tokai University |
3rd Author's Name | Atsushi Ando |
3rd Author's Affiliation | Electrotechnical Laboratory |
4th Author's Name | Masami Ishii |
4th Author's Affiliation | Electrotechnical Laboratory |
Date | 1993/11/18 |
Paper # | ED93-119,CPM93-90 |
Volume (vol) | vol.93 |
Number (no) | 325 |
Page | pp.pp.- |
#Pages | 6 |
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