Presentation 1993/11/18
NANOFABRICATION OF InP SURFACES AND OBSERVATION OF InPlGaInAs HETEROINTERFACES WITH AN STM OPERATED IN AIR
Francisco Vazquez, Daisuke Sonoda, Yasuyuki Miyamoto, Kazuhito Furuya,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A preliminary study about fabrication of nanostructures with a STM operated in air is presented.Moreover,we report also the observation of semiconductor heterointerfaces.To do this,it is necessary to passivate the semiconductor surface.We have used ammoninm sulphide£(NH_4)_2S_x!treatment to obtain flat surfaces an d stable STM images.The sample employed is a cleaved facet of n- InP treaed with(NH_4)_2S_x for 30 seconds.This surface is terminated with sulphur atoms.To effectuate nanofabrication,a voltage pulse is applied from the tip and a hole is opened in the surface.We think that the applied voltage removes the sulphur atoms in the position of the hole and the InP crystal remains exposed to air.We have also studied the effect of the pulse parameters Vp(voltage)and tp(time).About the observation of heterointerfaces,we have obtained stable images of InP, GaInAs interfaces.This means that it is possible to study semiconductor heterointerfaces with a STM operated in air,and could have application in the observation of embedded structures in the nanometer scale.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) STM / (NH_4)_2S_2 TREATMENT / SURFACE MODIFICATION / InP/GaInAs / HETEROINTERFACES
Paper # ED93-118,CPM93-89
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Committee ED
Conference Date 1993/11/18(1days)
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Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) NANOFABRICATION OF InP SURFACES AND OBSERVATION OF InPlGaInAs HETEROINTERFACES WITH AN STM OPERATED IN AIR
Sub Title (in English)
Keyword(1) STM
Keyword(2) (NH_4)_2S_2 TREATMENT
Keyword(3) SURFACE MODIFICATION
Keyword(4) InP/GaInAs
Keyword(5) HETEROINTERFACES
1st Author's Name Francisco Vazquez
1st Author's Affiliation TOKYO INSTITUTE OF TECHNOLOGY()
2nd Author's Name Daisuke Sonoda
2nd Author's Affiliation TOKYO INSTITUTE OF TECHNOLOGY
3rd Author's Name Yasuyuki Miyamoto
3rd Author's Affiliation TOKYO INSTITUTE OF TECHNOLOGY
4th Author's Name Kazuhito Furuya
4th Author's Affiliation TOKYO INSTITUTE OF TECHNOLOGY
Date 1993/11/18
Paper # ED93-118,CPM93-89
Volume (vol) vol.93
Number (no) 325
Page pp.pp.-
#Pages 6
Date of Issue