Presentation | 1993/11/18 NANOFABRICATION OF InP SURFACES AND OBSERVATION OF InPlGaInAs HETEROINTERFACES WITH AN STM OPERATED IN AIR Francisco Vazquez, Daisuke Sonoda, Yasuyuki Miyamoto, Kazuhito Furuya, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A preliminary study about fabrication of nanostructures with a STM operated in air is presented.Moreover,we report also the observation of semiconductor heterointerfaces.To do this,it is necessary to passivate the semiconductor surface.We have used ammoninm sulphide£(NH_4)_2S_x!treatment to obtain flat surfaces an d stable STM images.The sample employed is a cleaved facet of n- InP treaed with(NH_4)_2S_x for 30 seconds.This surface is terminated with sulphur atoms.To effectuate nanofabrication,a voltage pulse is applied from the tip and a hole is opened in the surface.We think that the applied voltage removes the sulphur atoms in the position of the hole and the InP crystal remains exposed to air.We have also studied the effect of the pulse parameters Vp(voltage)and tp(time).About the observation of heterointerfaces,we have obtained stable images of InP, GaInAs interfaces.This means that it is possible to study semiconductor heterointerfaces with a STM operated in air,and could have application in the observation of embedded structures in the nanometer scale. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | STM / (NH_4)_2S_2 TREATMENT / SURFACE MODIFICATION / InP/GaInAs / HETEROINTERFACES |
Paper # | ED93-118,CPM93-89 |
Date of Issue |
Conference Information | |
Committee | ED |
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Conference Date | 1993/11/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | NANOFABRICATION OF InP SURFACES AND OBSERVATION OF InPlGaInAs HETEROINTERFACES WITH AN STM OPERATED IN AIR |
Sub Title (in English) | |
Keyword(1) | STM |
Keyword(2) | (NH_4)_2S_2 TREATMENT |
Keyword(3) | SURFACE MODIFICATION |
Keyword(4) | InP/GaInAs |
Keyword(5) | HETEROINTERFACES |
1st Author's Name | Francisco Vazquez |
1st Author's Affiliation | TOKYO INSTITUTE OF TECHNOLOGY() |
2nd Author's Name | Daisuke Sonoda |
2nd Author's Affiliation | TOKYO INSTITUTE OF TECHNOLOGY |
3rd Author's Name | Yasuyuki Miyamoto |
3rd Author's Affiliation | TOKYO INSTITUTE OF TECHNOLOGY |
4th Author's Name | Kazuhito Furuya |
4th Author's Affiliation | TOKYO INSTITUTE OF TECHNOLOGY |
Date | 1993/11/18 |
Paper # | ED93-118,CPM93-89 |
Volume (vol) | vol.93 |
Number (no) | 325 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |