Presentation 1993/11/18
Observation of Cleaved Surface of GaAs(110)with Ultrahigh Vacuum Atomic Force Microscope
Yasuhiro Sugawara, Masahiro Ohta, Seizo Morita,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The first demonstration for the atomic resolution imaging of GaAs(110)surface with ultrahigh vacuum atomic force microscope(UHV AFM)are performed.Two demensional periodic structure has been seen, in which the As atoms seems to be resolved.Therefore,the UHV AFM has the poteitial capability for investigating the semiconductor surface having dangling bonds on an atomic scale.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Atomic Force Microscope / Ultra high Vacuum / GaAs / Atomic Rosolution / Dangling Bond / Roconstruction
Paper # ED93-117,CPM93-88
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Committee ED
Conference Date 1993/11/18(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Observation of Cleaved Surface of GaAs(110)with Ultrahigh Vacuum Atomic Force Microscope
Sub Title (in English)
Keyword(1) Atomic Force Microscope
Keyword(2) Ultra high Vacuum
Keyword(3) GaAs
Keyword(4) Atomic Rosolution
Keyword(5) Dangling Bond
Keyword(6) Roconstruction
1st Author's Name Yasuhiro Sugawara
1st Author's Affiliation Department of Physics,Faculty of Science,Hiroshima University()
2nd Author's Name Masahiro Ohta
2nd Author's Affiliation Department of Physics,Faculty of Science,Hiroshima University
3rd Author's Name Seizo Morita
3rd Author's Affiliation Department of Physics,Faculty of Science,Hiroshima University
Date 1993/11/18
Paper # ED93-117,CPM93-88
Volume (vol) vol.93
Number (no) 325
Page pp.pp.-
#Pages 5
Date of Issue