Presentation | 1993/11/18 Observation of Cleaved Surface of GaAs(110)with Ultrahigh Vacuum Atomic Force Microscope Yasuhiro Sugawara, Masahiro Ohta, Seizo Morita, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The first demonstration for the atomic resolution imaging of GaAs(110)surface with ultrahigh vacuum atomic force microscope(UHV AFM)are performed.Two demensional periodic structure has been seen, in which the As atoms seems to be resolved.Therefore,the UHV AFM has the poteitial capability for investigating the semiconductor surface having dangling bonds on an atomic scale. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Atomic Force Microscope / Ultra high Vacuum / GaAs / Atomic Rosolution / Dangling Bond / Roconstruction |
Paper # | ED93-117,CPM93-88 |
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Committee | ED |
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Conference Date | 1993/11/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Observation of Cleaved Surface of GaAs(110)with Ultrahigh Vacuum Atomic Force Microscope |
Sub Title (in English) | |
Keyword(1) | Atomic Force Microscope |
Keyword(2) | Ultra high Vacuum |
Keyword(3) | GaAs |
Keyword(4) | Atomic Rosolution |
Keyword(5) | Dangling Bond |
Keyword(6) | Roconstruction |
1st Author's Name | Yasuhiro Sugawara |
1st Author's Affiliation | Department of Physics,Faculty of Science,Hiroshima University() |
2nd Author's Name | Masahiro Ohta |
2nd Author's Affiliation | Department of Physics,Faculty of Science,Hiroshima University |
3rd Author's Name | Seizo Morita |
3rd Author's Affiliation | Department of Physics,Faculty of Science,Hiroshima University |
Date | 1993/11/18 |
Paper # | ED93-117,CPM93-88 |
Volume (vol) | vol.93 |
Number (no) | 325 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |