Presentation | 1993/11/18 In-situ and Real Time Maniforing of Semiconductor Surface by Atomic Force Microscope under Potential Control Kohei Uosaki, Michio Koinuma, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Atomic force microscope(AFM)was employed to observe GaAs surface. We examined the effect of ex-situ chemical etching on the surface structure and performed in-situ AFM measurements during electrochemical reaction in 10 mM HCI under potential control.In the case of chemical etching,we investigated the effect of temprature and time of dip-treatment.In the case of in-situ measurements on pGaAs,no surface structure change was observed under open circuit potential,but under cathodic potential,surface structure became flat and under anodic potential,pyramidal structure was formed.On the top of the pyramidal structure,atomic image corresponding the(100)face was obtained. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | atomic force microscope / GaAs / electrochemical etching / chemical etching |
Paper # | ED93-116,CPM93-87 |
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Committee | ED |
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Conference Date | 1993/11/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | In-situ and Real Time Maniforing of Semiconductor Surface by Atomic Force Microscope under Potential Control |
Sub Title (in English) | |
Keyword(1) | atomic force microscope |
Keyword(2) | GaAs |
Keyword(3) | electrochemical etching |
Keyword(4) | chemical etching |
1st Author's Name | Kohei Uosaki |
1st Author's Affiliation | Department of Chemistry,Faculty of Science,Hokkaido University() |
2nd Author's Name | Michio Koinuma |
2nd Author's Affiliation | Department of Chemistry,Faculty of Science,Hokkaido University |
Date | 1993/11/18 |
Paper # | ED93-116,CPM93-87 |
Volume (vol) | vol.93 |
Number (no) | 325 |
Page | pp.pp.- |
#Pages | 6 |
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