Presentation 1993/11/18
In-situ and Real Time Maniforing of Semiconductor Surface by Atomic Force Microscope under Potential Control
Kohei Uosaki, Michio Koinuma,
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Abstract(in English) Atomic force microscope(AFM)was employed to observe GaAs surface. We examined the effect of ex-situ chemical etching on the surface structure and performed in-situ AFM measurements during electrochemical reaction in 10 mM HCI under potential control.In the case of chemical etching,we investigated the effect of temprature and time of dip-treatment.In the case of in-situ measurements on pGaAs,no surface structure change was observed under open circuit potential,but under cathodic potential,surface structure became flat and under anodic potential,pyramidal structure was formed.On the top of the pyramidal structure,atomic image corresponding the(100)face was obtained.
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Keyword(in English) atomic force microscope / GaAs / electrochemical etching / chemical etching
Paper # ED93-116,CPM93-87
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Committee ED
Conference Date 1993/11/18(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) In-situ and Real Time Maniforing of Semiconductor Surface by Atomic Force Microscope under Potential Control
Sub Title (in English)
Keyword(1) atomic force microscope
Keyword(2) GaAs
Keyword(3) electrochemical etching
Keyword(4) chemical etching
1st Author's Name Kohei Uosaki
1st Author's Affiliation Department of Chemistry,Faculty of Science,Hokkaido University()
2nd Author's Name Michio Koinuma
2nd Author's Affiliation Department of Chemistry,Faculty of Science,Hokkaido University
Date 1993/11/18
Paper # ED93-116,CPM93-87
Volume (vol) vol.93
Number (no) 325
Page pp.pp.-
#Pages 6
Date of Issue