Presentation 1993/11/18
Scanning tunneling microscopy study of GaAs step structures on vicinal substrate grown by metalorganic chemical vapor deposition
Makoto Kasu, Naoki Kobayashi,
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Abstract(in English) Using scanning tunneling microscopy(STM),we study the step structure of metalorganic chemical vapor deposition(MOCVD)- grown(001)GaAs on a vicinal substrate for the first time.The undulation amplitude of the monolayer steps grown on a surface misoriented in the£110!direction(A step)is about twice that of the se grown on a surface misoriented in the£1^^-10!direction(B step). On a substrate at misorientation angles≦7.0°,step bunching occurs and the vicinal surface decomposed into(001)terraces and facets on which steps bunch when 575℃≦growth temperature(Tg)≦650℃;and ell iptical islands appear between the monolayer steps due to a decrease of Ga diffusion coefficient at Tg=530℃.
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Keyword(in English) STM / MOCVD / Monolayer step / GaAs / Step bunching / Surface diffusion
Paper # ED93-115,CPM93-86
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Committee ED
Conference Date 1993/11/18(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Scanning tunneling microscopy study of GaAs step structures on vicinal substrate grown by metalorganic chemical vapor deposition
Sub Title (in English)
Keyword(1) STM
Keyword(2) MOCVD
Keyword(3) Monolayer step
Keyword(4) GaAs
Keyword(5) Step bunching
Keyword(6) Surface diffusion
1st Author's Name Makoto Kasu
1st Author's Affiliation NTT Basic Research Laboratories()
2nd Author's Name Naoki Kobayashi
2nd Author's Affiliation NTT Basic Research Laboratories
Date 1993/11/18
Paper # ED93-115,CPM93-86
Volume (vol) vol.93
Number (no) 325
Page pp.pp.-
#Pages 6
Date of Issue