Presentation 1993/11/18
Scanning Tunneling Microscopy of GaAs Heteroepitaxial Growth on InAs Substrates
Shunsuke Ohkouchi, Nobuyuki Ikoma, Ichiro Tanaka,
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Abstract(in English) The initial stages of GaAs heteroepitaxial growth on InAs substrates were investigated with an ultra-high-vacuum scanning tunneling microscope(UHVSTM)system equipped with a molecular beam epitaxy facility.An STM image of 1.0 ML a GaAs deposited InAs surface showed island formation with an island size of about ten nm x a few tens of nm,which were longer in the£11^^-0!direction.On the other hand,when 2.0 ML GaAs was deposited on the InAs surface, this anisotropy disappeared,and compact and pyramid-like islands were formed.These islands coalesced and became larger with increasing the amount of GaAs deposition.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) STM / heteroepitaxy / GaAs / InAs / island formation / island coalescence
Paper # ED93-114,CPM93-85
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Conference Date 1993/11/18(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Scanning Tunneling Microscopy of GaAs Heteroepitaxial Growth on InAs Substrates
Sub Title (in English)
Keyword(1) STM
Keyword(2) heteroepitaxy
Keyword(3) GaAs
Keyword(4) InAs
Keyword(5) island formation
Keyword(6) island coalescence
1st Author's Name Shunsuke Ohkouchi
1st Author's Affiliation Optoelectronics Technology Research Laboratory(OTL)()
2nd Author's Name Nobuyuki Ikoma
2nd Author's Affiliation Optoelectronics Technology Research Laboratory(OTL)
3rd Author's Name Ichiro Tanaka
3rd Author's Affiliation Nippon Sheet Glass Co.,Ltd.
Date 1993/11/18
Paper # ED93-114,CPM93-85
Volume (vol) vol.93
Number (no) 325
Page pp.pp.-
#Pages 6
Date of Issue