| Presentation | 1993/11/18 Step structure and formation during MOCVD growth of GaAs and AlAs. Masanori Shinohara, Masafumi Tanimoto, Haruki Yokoyama, Jiro Oosaka, Naohisa Inoue, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The behavior and mechanism of step formation process during MOCVD growth of GaAs and AlAs on(100)just surfaces are investigated.The steps are formed during thermal cleaning for removing surface oxide.The steps are formed in the£100! direction and the terrace width is determined by the diffusion length of As. The step structure during GaAs growth strongly depends on the step structure formed in the thermal process.The wide terrace width of more than 0.5μm and monolayer step flow growth are reproducibly ob tained using TEG and TMA as well as TMG. The critical substrate terrace width at which step bunching occurs exists for the growth on vicinal substrate surfaces. Variation of step barrier potentials depending on the terrace width and the effective diffusion length of Ga atoms are thought to play an important role in causing step bunching. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / GaAs / AlAs / AFM / Surface step / step flow growth |
| Paper # | ED93-113,CPM93-84 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1993/11/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Step structure and formation during MOCVD growth of GaAs and AlAs. |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | GaAs |
| Keyword(3) | AlAs |
| Keyword(4) | AFM |
| Keyword(5) | Surface step |
| Keyword(6) | step flow growth |
| 1st Author's Name | Masanori Shinohara |
| 1st Author's Affiliation | NTT LSI Laboratories() |
| 2nd Author's Name | Masafumi Tanimoto |
| 2nd Author's Affiliation | NTT LSI Laboratories |
| 3rd Author's Name | Haruki Yokoyama |
| 3rd Author's Affiliation | NTT LSI Laboratories |
| 4th Author's Name | Jiro Oosaka |
| 4th Author's Affiliation | NTT LSI Laboratories |
| 5th Author's Name | Naohisa Inoue |
| 5th Author's Affiliation | NTT LSI Laboratories |
| Date | 1993/11/18 |
| Paper # | ED93-113,CPM93-84 |
| Volume (vol) | vol.93 |
| Number (no) | 325 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |