Presentation 1993/5/21
Band-Edge-Emphasizing Photodetector
Ken-ichi Sugimoto, Kazutoshi Nakajima, Toru Hirohata, Yoshihiko Mizushima,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Photodetector having a sensitivity only in a narrow-wavelength region is fabricated by utilizing a semi-insulating GaAs (SI GaAs) as the active layer.The photocurrent is observed only when the reciprocal absorption coefficient nearly equals to the SI GaAs thickness,based on the steep change of the absorption coefficient. The mechanism is explained by a model composed of two different parts,conncted in series,in the active layer.An optical sensitivity in a near-infrared region of 1.1μm-1.5μm is also desc ribed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SI GaAs / optical sensitivity / bandgap / absorption coefficient / avalanche / current multiplication
Paper # ED93-32,CPM93-23
Date of Issue

Conference Information
Committee ED
Conference Date 1993/5/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Band-Edge-Emphasizing Photodetector
Sub Title (in English)
Keyword(1) SI GaAs
Keyword(2) optical sensitivity
Keyword(3) bandgap
Keyword(4) absorption coefficient
Keyword(5) avalanche
Keyword(6) current multiplication
1st Author's Name Ken-ichi Sugimoto
1st Author's Affiliation Hamamatsu Photonics()
2nd Author's Name Kazutoshi Nakajima
2nd Author's Affiliation Hamamatsu Photonics
3rd Author's Name Toru Hirohata
3rd Author's Affiliation Hamamatsu Photonics
4th Author's Name Yoshihiko Mizushima
4th Author's Affiliation Hamamatsu Photonics
Date 1993/5/21
Paper # ED93-32,CPM93-23
Volume (vol) vol.93
Number (no) 46
Page pp.pp.-
#Pages 8
Date of Issue