Presentation 1993/5/21
Characterization of CZ-Si single-crystals based on Photoluminescence using Fourier transform Raman Spectrometer
Mototsugu Hamada, Takashi Katoda,
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Abstract(in English) Fourier transform Raman spectrometer(FT-Raman)was used for measurement of photoluminescence from silicon single-crystals grown by Czochralski method(CZ-Si).Thermal donors and oxygen precipitates were formed in CZ-Si by annealing around 500℃ and at a temperature higher than 800℃.Luminescence whose peak was around 0.7eV was observed after either of these defects was formed. Using FT-Raman,it was possible to observe luminescence from thermal donors or oxygen precipitates formed by very short annealing.By the method,it was shown that thermal donors were formed only in the center region of crystals which had been grown at a relatively low rate.A new model was proposed that distribution of oxygen clusters and self-interstitial slicon decide the ring distribution of oxidation-induced stacking faults.
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Keyword(in English) Fourier transform Raman spectrometer / infra-red spectroscopy / photoluminescence / thermal donor / oxygen precipitate / stacking fault ring
Paper # ED93-27,CPM93-18
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Committee ED
Conference Date 1993/5/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Characterization of CZ-Si single-crystals based on Photoluminescence using Fourier transform Raman Spectrometer
Sub Title (in English)
Keyword(1) Fourier transform Raman spectrometer
Keyword(2) infra-red spectroscopy
Keyword(3) photoluminescence
Keyword(4) thermal donor
Keyword(5) oxygen precipitate
Keyword(6) stacking fault ring
1st Author's Name Mototsugu Hamada
1st Author's Affiliation Department of Electronic Engineering,Faculty of Engineering,The University of Tokyo()
2nd Author's Name Takashi Katoda
2nd Author's Affiliation Department of Electronic Engineering,Faculty of Engineering,The University of Tokyo
Date 1993/5/21
Paper # ED93-27,CPM93-18
Volume (vol) vol.93
Number (no) 46
Page pp.pp.-
#Pages 8
Date of Issue