| Presentation | 1993/5/21 Fabrication of AlGaAs/GaAs surface emitting laser on Si substrate Tsunemasa Deguchi, Yoshiaki Hasegawa, Takashi Egawa, Takashi Jinbo, Masayoshi Umeno, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated an AlGaAs, GaAs separate confinement heterostructure single,-quantum-well surface emitting laser on Si substrate by MOCVD.AlAs/GaAs semiconductor multi-layers of distributed Bragg reflector structure and nonalloyed Au-Zn/Au metal reflector were used as the reflection mirrors for inner substrate(Si substrate side)and surface substrate light output side),respectively.The laser has exhibited the pulsed Ihreshold current as low as 79 mA(the Ihreshold current density as low as 4. 9 kA/cm^2)at room temperature under the pulsed condition(the cycle: 1μsec.,the width:O.1μsec.).The peak spectrum was 841 nm.Major imp rovements in the active layer structure and the reflecting mirror are still necessary for room- temperature CW operation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / GaAs/i substrate / Surface emitting laser / AlAs/aAs DBR / room temperature pulsed exciation |
| Paper # | ED93-23,CPM93-14 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1993/5/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of AlGaAs/GaAs surface emitting laser on Si substrate |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | GaAs/i substrate |
| Keyword(3) | Surface emitting laser |
| Keyword(4) | AlAs/aAs DBR |
| Keyword(5) | room temperature pulsed exciation |
| 1st Author's Name | Tsunemasa Deguchi |
| 1st Author's Affiliation | Nagoya institute of technology() |
| 2nd Author's Name | Yoshiaki Hasegawa |
| 2nd Author's Affiliation | Nagoya institute of technology |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya institute of technology |
| 4th Author's Name | Takashi Jinbo |
| 4th Author's Affiliation | Nagoya institute of technology |
| 5th Author's Name | Masayoshi Umeno |
| 5th Author's Affiliation | Nagoya institute of technology |
| Date | 1993/5/21 |
| Paper # | ED93-23,CPM93-14 |
| Volume (vol) | vol.93 |
| Number (no) | 46 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |