| Presentation | 1993/5/20 Characterization of CuInS_2 thin films fabricated by sulfulization Yoshitaka Ogawa, Shouichi Uenishi, Kentaro Ito, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The compound semiconductor of CuInS_2 with chalcopyrite structure has an optimum energy band gap of 1.5 eV for the photon absorber of solar cells.We measured the electrical characteristics of the CuInS_2 thin films which are fabricated by sulfulization of precursor Cu-In layers deposited on glass substrates.The film resistivity was decreased gradually when the film was exposed in room ambient.It was revealed by Hall measurements that the decrease in the resistivity was caused by the increase in the hole mobility of the film.A thin film exposed to room air for about two hundred days had the hole concentration of 1.96x10^20> cm^-3> and the hole mobility of 0.36 cm^2, Vs.After annealing in vacuum, the hole concentration did not change but the hole mobility decreased.These experimental findings seem to suggest that the electrical conduction in the film is influenced by absorbed gaseous molecules at the grain boundaries of the film. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CuInS^2 thin films / ageing effect / hole moblity / hole concentration / annealing |
| Paper # | ED93-18,CPM93-9 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1993/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of CuInS_2 thin films fabricated by sulfulization |
| Sub Title (in English) | |
| Keyword(1) | CuInS^2 thin films |
| Keyword(2) | ageing effect |
| Keyword(3) | hole moblity |
| Keyword(4) | hole concentration |
| Keyword(5) | annealing |
| 1st Author's Name | Yoshitaka Ogawa |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering,Faculty of Engineering,Shinshu University() |
| 2nd Author's Name | Shouichi Uenishi |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering,Faculty of Engineering,Shinshu University |
| 3rd Author's Name | Kentaro Ito |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering,Faculty of Engineering,Shinshu University |
| Date | 1993/5/20 |
| Paper # | ED93-18,CPM93-9 |
| Volume (vol) | vol.93 |
| Number (no) | 45 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |