Presentation | 1993/5/20 Study of impurity doping in MOVPE grown CdTe Junichi Yamaguchi, Masaki Ohno, Ferid Touati, Kazuhito Yasuda, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Correlations of surface morphology with the growth characteristcs and optimal doping conditions of (100)CdTe layers grown by metalorganic vapor phase epitaxy have been studied. Growths were carried out on(100)GaAs substrates using diethyltellurium(DETe)and dimethylcadmium(DMCd).Pyramidal hillocks characterized the surface morphology at DETe, DMCd flow ratios below unity,where high p-type doping by arsenic was achieved.By increasing the DETe/DMCd flow ratio from 1 to 2,the surfaces started to show smooth and specular morphologies,where high n-type doping by gallium was achieved.For DETe/DMCd flow ratios exceeding 2,the surfaces changed to show ellipse-like pits which were considered to be due to Te precipitate. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MOVPE / CdTe / Ga-doping / As-doping / surface morphology |
Paper # | ED93-17,CPM93-8 |
Date of Issue |
Conference Information | |
Committee | ED |
---|---|
Conference Date | 1993/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electron Devices (ED) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Study of impurity doping in MOVPE grown CdTe |
Sub Title (in English) | |
Keyword(1) | MOVPE |
Keyword(2) | CdTe |
Keyword(3) | Ga-doping |
Keyword(4) | As-doping |
Keyword(5) | surface morphology |
1st Author's Name | Junichi Yamaguchi |
1st Author's Affiliation | Nagoya Institute of technology() |
2nd Author's Name | Masaki Ohno |
2nd Author's Affiliation | Nagoya Institute of technology |
3rd Author's Name | Ferid Touati |
3rd Author's Affiliation | Nagoya Institute of technology |
4th Author's Name | Kazuhito Yasuda |
4th Author's Affiliation | Nagoya Institute of technology |
Date | 1993/5/20 |
Paper # | ED93-17,CPM93-8 |
Volume (vol) | vol.93 |
Number (no) | 45 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |