Presentation 1993/5/20
Study of impurity doping in MOVPE grown CdTe
Junichi Yamaguchi, Masaki Ohno, Ferid Touati, Kazuhito Yasuda,
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Abstract(in English) Correlations of surface morphology with the growth characteristcs and optimal doping conditions of (100)CdTe layers grown by metalorganic vapor phase epitaxy have been studied. Growths were carried out on(100)GaAs substrates using diethyltellurium(DETe)and dimethylcadmium(DMCd).Pyramidal hillocks characterized the surface morphology at DETe, DMCd flow ratios below unity,where high p-type doping by arsenic was achieved.By increasing the DETe/DMCd flow ratio from 1 to 2,the surfaces started to show smooth and specular morphologies,where high n-type doping by gallium was achieved.For DETe/DMCd flow ratios exceeding 2,the surfaces changed to show ellipse-like pits which were considered to be due to Te precipitate.
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Keyword(in English) MOVPE / CdTe / Ga-doping / As-doping / surface morphology
Paper # ED93-17,CPM93-8
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Committee ED
Conference Date 1993/5/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Study of impurity doping in MOVPE grown CdTe
Sub Title (in English)
Keyword(1) MOVPE
Keyword(2) CdTe
Keyword(3) Ga-doping
Keyword(4) As-doping
Keyword(5) surface morphology
1st Author's Name Junichi Yamaguchi
1st Author's Affiliation Nagoya Institute of technology()
2nd Author's Name Masaki Ohno
2nd Author's Affiliation Nagoya Institute of technology
3rd Author's Name Ferid Touati
3rd Author's Affiliation Nagoya Institute of technology
4th Author's Name Kazuhito Yasuda
4th Author's Affiliation Nagoya Institute of technology
Date 1993/5/20
Paper # ED93-17,CPM93-8
Volume (vol) vol.93
Number (no) 45
Page pp.pp.-
#Pages 5
Date of Issue