Presentation | 1993/5/20 Cleaning Process of Etch-Free InP Substrate and Molecular Beam Epitaxy of InGaAs System Yoshinobu Sugiyama, Kiyoto Nakamura, Koji Sano, Shin-ichiro Uekusa, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have studied on the cleaning process of an InP substrate In the package occupied with nitrogen gas and the following process on the molecular beam epitaxy of InAlAs, InGaAs heterostructures on the InP substrate.The InP surface has been prevented from oxidizing for more than 1 year.The wet-etching process for cleaning just before putting the substrate to the MBE chamber is not necessary for the nitrogen stabilized surface of InP.High quality materials with the high electron mobility of more than 10, 000 cm^2/Vs for lattice-matched structures,and 15,000 cm^2/Vs for pseudomorphic structures at room temperature are obtained. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MBE / Substrate Cleaning / InGaAs |
Paper # | ED93-15,CPM93-6 |
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Conference Information | |
Committee | ED |
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Conference Date | 1993/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Cleaning Process of Etch-Free InP Substrate and Molecular Beam Epitaxy of InGaAs System |
Sub Title (in English) | |
Keyword(1) | MBE |
Keyword(2) | Substrate Cleaning |
Keyword(3) | InGaAs |
1st Author's Name | Yoshinobu Sugiyama |
1st Author's Affiliation | Electrotechnical Laboratory() |
2nd Author's Name | Kiyoto Nakamura |
2nd Author's Affiliation | Meiji University |
3rd Author's Name | Koji Sano |
3rd Author's Affiliation | Meiji University |
4th Author's Name | Shin-ichiro Uekusa |
4th Author's Affiliation | Meiji University |
Date | 1993/5/20 |
Paper # | ED93-15,CPM93-6 |
Volume (vol) | vol.93 |
Number (no) | 45 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |