Presentation 1993/5/20
Cleaning Process of Etch-Free InP Substrate and Molecular Beam Epitaxy of InGaAs System
Yoshinobu Sugiyama, Kiyoto Nakamura, Koji Sano, Shin-ichiro Uekusa,
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Abstract(in English) We have studied on the cleaning process of an InP substrate In the package occupied with nitrogen gas and the following process on the molecular beam epitaxy of InAlAs, InGaAs heterostructures on the InP substrate.The InP surface has been prevented from oxidizing for more than 1 year.The wet-etching process for cleaning just before putting the substrate to the MBE chamber is not necessary for the nitrogen stabilized surface of InP.High quality materials with the high electron mobility of more than 10, 000 cm^2/Vs for lattice-matched structures,and 15,000 cm^2/Vs for pseudomorphic structures at room temperature are obtained.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MBE / Substrate Cleaning / InGaAs
Paper # ED93-15,CPM93-6
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Committee ED
Conference Date 1993/5/20(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Cleaning Process of Etch-Free InP Substrate and Molecular Beam Epitaxy of InGaAs System
Sub Title (in English)
Keyword(1) MBE
Keyword(2) Substrate Cleaning
Keyword(3) InGaAs
1st Author's Name Yoshinobu Sugiyama
1st Author's Affiliation Electrotechnical Laboratory()
2nd Author's Name Kiyoto Nakamura
2nd Author's Affiliation Meiji University
3rd Author's Name Koji Sano
3rd Author's Affiliation Meiji University
4th Author's Name Shin-ichiro Uekusa
4th Author's Affiliation Meiji University
Date 1993/5/20
Paper # ED93-15,CPM93-6
Volume (vol) vol.93
Number (no) 45
Page pp.pp.-
#Pages 6
Date of Issue