Presentation 1993/5/20
Characterization of GaAs Surfaces grown by MOCVD,MBE and CBE using Atomic Force Microscopy
Naohisa Inoue, Jiro Osaka, Kenji Ikuta, Haruki Yokoyama, Hideo Sugiura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A new technique preparing GaAsP layers with a desired composition on GaP substrates has been developed. A GaAs layer grown on a GaP substrate by step cooling was brought into contact with Ga-As-P saturated solution,and kept at 795℃.This annealing process resulted the conversion in composition of the GaAs layer to GaAsP.This conversion was completed within about 5 min.The alloy composition could be controlled by adjusting the composition of the Ga-As-P solution.Fairly good GaAsP layers were obtained on the transformed layer by a consecutive process of slow cooling after the annealing.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOCVD / MBE / CBE / AFM / STM
Paper # ED93-14,CPM93-5
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Committee ED
Conference Date 1993/5/20(1days)
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Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization of GaAs Surfaces grown by MOCVD,MBE and CBE using Atomic Force Microscopy
Sub Title (in English)
Keyword(1) MOCVD
Keyword(2) MBE
Keyword(3) CBE
Keyword(4) AFM
Keyword(5) STM
1st Author's Name Naohisa Inoue
1st Author's Affiliation NTT LSI Laboratories()
2nd Author's Name Jiro Osaka
2nd Author's Affiliation NTT LSI Laboratories
3rd Author's Name Kenji Ikuta
3rd Author's Affiliation NTT LSI Laboratories
4th Author's Name Haruki Yokoyama
4th Author's Affiliation NTT LSI Laboratories
5th Author's Name Hideo Sugiura
5th Author's Affiliation NTT Optoelectronics Laboratories
Date 1993/5/20
Paper # ED93-14,CPM93-5
Volume (vol) vol.93
Number (no) 45
Page pp.pp.-
#Pages 6
Date of Issue