Presentation | 1993/5/20 Characterization of GaAs Surfaces grown by MOCVD,MBE and CBE using Atomic Force Microscopy Naohisa Inoue, Jiro Osaka, Kenji Ikuta, Haruki Yokoyama, Hideo Sugiura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A new technique preparing GaAsP layers with a desired composition on GaP substrates has been developed. A GaAs layer grown on a GaP substrate by step cooling was brought into contact with Ga-As-P saturated solution,and kept at 795℃.This annealing process resulted the conversion in composition of the GaAs layer to GaAsP.This conversion was completed within about 5 min.The alloy composition could be controlled by adjusting the composition of the Ga-As-P solution.Fairly good GaAsP layers were obtained on the transformed layer by a consecutive process of slow cooling after the annealing. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MOCVD / MBE / CBE / AFM / STM |
Paper # | ED93-14,CPM93-5 |
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Conference Information | |
Committee | ED |
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Conference Date | 1993/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characterization of GaAs Surfaces grown by MOCVD,MBE and CBE using Atomic Force Microscopy |
Sub Title (in English) | |
Keyword(1) | MOCVD |
Keyword(2) | MBE |
Keyword(3) | CBE |
Keyword(4) | AFM |
Keyword(5) | STM |
1st Author's Name | Naohisa Inoue |
1st Author's Affiliation | NTT LSI Laboratories() |
2nd Author's Name | Jiro Osaka |
2nd Author's Affiliation | NTT LSI Laboratories |
3rd Author's Name | Kenji Ikuta |
3rd Author's Affiliation | NTT LSI Laboratories |
4th Author's Name | Haruki Yokoyama |
4th Author's Affiliation | NTT LSI Laboratories |
5th Author's Name | Hideo Sugiura |
5th Author's Affiliation | NTT Optoelectronics Laboratories |
Date | 1993/5/20 |
Paper # | ED93-14,CPM93-5 |
Volume (vol) | vol.93 |
Number (no) | 45 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |