Presentation 1993/5/20
The C-V profile of heavily Si δ-doped GaAs grown by MBE
Takamasa Suzuki, Hideo Goto, Nobuhiko Sawaki, Hirosi Ito, Kunihiko Hara,
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Abstract(in English) Sheet conductivity σ_□ and C-V profile of heavily Si δ-doped G aAs grown by MBE are investigated.By increasing the doping concentration from 0.4 through 4.7x10^13>cm^-2>,highest σ_□ of 19mS, _□ is obtained at 1.2x10^13>cm^-2>.Further increase of the doping decreases σ_□.The donor concentration estimated by the C- V profile suggests that the segregation of Si occurs in the highly doped samples.The narrowest C-V profile is obtained in the sample grown at 500℃ with 1.2x10^13>cm^-2> doping.The photoluminescence spectra at 4.2K shows the Si_Ga>-Si_As> donner-acceptor pair transition in samples doped more than 1.2x10^13>cm^-2>.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) δ-doped GaAs / C-V profile / Segregation / Diffusion / Photolu minescence
Paper # ED93-11,CPM93-2
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Committee ED
Conference Date 1993/5/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The C-V profile of heavily Si δ-doped GaAs grown by MBE
Sub Title (in English)
Keyword(1) δ-doped GaAs
Keyword(2) C-V profile
Keyword(3) Segregation
Keyword(4) Diffusion
Keyword(5) Photolu minescence
1st Author's Name Takamasa Suzuki
1st Author's Affiliation Department of Electronics,School of Engineering,Nagoya University()
2nd Author's Name Hideo Goto
2nd Author's Affiliation Department of Electronics,School of Engineering,Nagoya University
3rd Author's Name Nobuhiko Sawaki
3rd Author's Affiliation Department of Electronics,School of Engineering,Nagoya University
4th Author's Name Hirosi Ito
4th Author's Affiliation Research and Development Department,Nippondenso Co.Ltd.
5th Author's Name Kunihiko Hara
5th Author's Affiliation Research and Development Department,Nippondenso Co.Ltd.
Date 1993/5/20
Paper # ED93-11,CPM93-2
Volume (vol) vol.93
Number (no) 45
Page pp.pp.-
#Pages 6
Date of Issue