Presentation 1993/5/20
Liquid-Phase Epitaxy of Lattice-Mismatched In_xGa_1-x>As Layers on (001)GaAs Substrates
Shin-ichi Nakatani, Masaya Ichimura, Akira Usami, Takao Wada,
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Abstract(in English) Highly-lattice-mismatched In_xGa_1-x>As layers (x>0.2) are grown on (001) GaAs substrates by liquid-phase epitaxy.Surfaces of the grown layers are rough for x largerthan 0.1.To characterize the crystallinity of the layer,we measure polarized Raman spectra and X-ray diffraction patterns after polishing and etching the surfaces.The results show that single-crystalline layers grow epitaxially even for x>0.2. The diffraction peak width increases with x in a composition range X0.9 probably because of poor quality,but it decreases for x>0.9 in spite of the large lattice mismatch.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaAs / liquid-phase epitaxy / lattice mismatch / Raman scattering / X-ray diffraction
Paper # ED93-10,CPM93-1
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Committee ED
Conference Date 1993/5/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Liquid-Phase Epitaxy of Lattice-Mismatched In_xGa_1-x>As Layers on (001)GaAs Substrates
Sub Title (in English)
Keyword(1) InGaAs
Keyword(2) liquid-phase epitaxy
Keyword(3) lattice mismatch
Keyword(4) Raman scattering
Keyword(5) X-ray diffraction
1st Author's Name Shin-ichi Nakatani
1st Author's Affiliation Department of Electrical and Computer Engineering,Nagoya Institute of Technology()
2nd Author's Name Masaya Ichimura
2nd Author's Affiliation Department of Electrical and Computer Engineering,Nagoya Institute of Technology
3rd Author's Name Akira Usami
3rd Author's Affiliation Department of Electrical and Computer Engineering,Nagoya Institute of Technology
4th Author's Name Takao Wada
4th Author's Affiliation Department of Electrical and Computer Engineering,Nagoya Institute of Technology
Date 1993/5/20
Paper # ED93-10,CPM93-1
Volume (vol) vol.93
Number (no) 45
Page pp.pp.-
#Pages 6
Date of Issue