Presentation | 1993/4/23 A study on monolithic integration of resonant tunneling diodes and HEMTs Yuu Watanabe, Yasuhiro Nakasha, Kenji Imanishi, Masahiko Takikawa, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this paper we report the first monolithic integration of InGaAs, InAlAs resonant tunneling diode(RTD) and high electron mobility transistor (HEMT) epitaxially grown on an InP substrate. The transconductance for a 1-μm HEMT was 430 mS/mm and the peak-to -valley current ratio of the RTD was 5.1.Using this integrated structure,we demonstrate a static RAM cell circuit,consisting of a single transistor with two RTDs on the transistor.The memory cell circuit exhibits bistability,based on the RTD′s negative different ial resistance,at supply voltage from 0.6 to 1.1V. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | resonant tunneling diode / HEMT / logic / SRAM / InGaAs / InAlAs |
Paper # | ED93-9 |
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Conference Information | |
Committee | ED |
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Conference Date | 1993/4/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A study on monolithic integration of resonant tunneling diodes and HEMTs |
Sub Title (in English) | |
Keyword(1) | resonant tunneling diode |
Keyword(2) | HEMT |
Keyword(3) | logic |
Keyword(4) | SRAM |
Keyword(5) | InGaAs |
Keyword(6) | InAlAs |
1st Author's Name | Yuu Watanabe |
1st Author's Affiliation | Fujitsu Laboratories() |
2nd Author's Name | Yasuhiro Nakasha |
2nd Author's Affiliation | Fujitsu Laboratories |
3rd Author's Name | Kenji Imanishi |
3rd Author's Affiliation | Fujitsu Laboratories |
4th Author's Name | Masahiko Takikawa |
4th Author's Affiliation | Fujitsu Laboratories |
Date | 1993/4/23 |
Paper # | ED93-9 |
Volume (vol) | vol.93 |
Number (no) | 12 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |