Presentation 1993/4/23
A study on monolithic integration of resonant tunneling diodes and HEMTs
Yuu Watanabe, Yasuhiro Nakasha, Kenji Imanishi, Masahiko Takikawa,
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Abstract(in English) In this paper we report the first monolithic integration of InGaAs, InAlAs resonant tunneling diode(RTD) and high electron mobility transistor (HEMT) epitaxially grown on an InP substrate. The transconductance for a 1-μm HEMT was 430 mS/mm and the peak-to -valley current ratio of the RTD was 5.1.Using this integrated structure,we demonstrate a static RAM cell circuit,consisting of a single transistor with two RTDs on the transistor.The memory cell circuit exhibits bistability,based on the RTD′s negative different ial resistance,at supply voltage from 0.6 to 1.1V.
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Keyword(in English) resonant tunneling diode / HEMT / logic / SRAM / InGaAs / InAlAs
Paper # ED93-9
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Committee ED
Conference Date 1993/4/23(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A study on monolithic integration of resonant tunneling diodes and HEMTs
Sub Title (in English)
Keyword(1) resonant tunneling diode
Keyword(2) HEMT
Keyword(3) logic
Keyword(4) SRAM
Keyword(5) InGaAs
Keyword(6) InAlAs
1st Author's Name Yuu Watanabe
1st Author's Affiliation Fujitsu Laboratories()
2nd Author's Name Yasuhiro Nakasha
2nd Author's Affiliation Fujitsu Laboratories
3rd Author's Name Kenji Imanishi
3rd Author's Affiliation Fujitsu Laboratories
4th Author's Name Masahiko Takikawa
4th Author's Affiliation Fujitsu Laboratories
Date 1993/4/23
Paper # ED93-9
Volume (vol) vol.93
Number (no) 12
Page pp.pp.-
#Pages 6
Date of Issue