| Presentation | 1993/10/21 Epitaxial growth of InSb on Si Hirofumi Ohba, Takashi Haryuu, Shoichi Ono, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InSb has been epitaxially grown directly on Si by plasma- assisted epitaxy(PAE)in discharging plasma.Furthermore some experiments related to Si surface cleaning prior to epitaxial growth were carried out.Reflection high-energy electron diffraction(RHEED)studies indicate that the property of InSb films is critically affected by the method of cleaning using hydrogen plasma exposure.Arsenic exposure following Si surface cleaning is effective in surface passivation and makes the epitaxial growth of InSb possible on Si(111). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InSb / PAE / Si surface cleaning / hydrogen plasma exposure / As exposure / RHEED |
| Paper # | ED93-104 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1993/10/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial growth of InSb on Si |
| Sub Title (in English) | |
| Keyword(1) | InSb |
| Keyword(2) | PAE |
| Keyword(3) | Si surface cleaning |
| Keyword(4) | hydrogen plasma exposure |
| Keyword(5) | As exposure |
| Keyword(6) | RHEED |
| 1st Author's Name | Hirofumi Ohba |
| 1st Author's Affiliation | Department of Electronic Engineering,Tohoku University() |
| 2nd Author's Name | Takashi Haryuu |
| 2nd Author's Affiliation | Department of Electronic Engineering,Tohoku University |
| 3rd Author's Name | Shoichi Ono |
| 3rd Author's Affiliation | Research Institute of Electrical Communication,Tohoku University |
| Date | 1993/10/21 |
| Paper # | ED93-104 |
| Volume (vol) | vol.93 |
| Number (no) | 285 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |