| Presentation | 1993/10/21 Highly selective etching of GaAs/AlGaAs hetero structures with citric acid-based etchats. Toshiaki Kitano, Shigekazu Izumi, Yoshito Seiwa, Hirozou Takano, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Citric acid-based etchants,which consist of citric acid,ammonium hydroxide and hydrogen peroxide,has been developed for highly selective etching of GaAs on AlGaAs.The GaAs to Al_0.15>Ga_0.85> As etch selectivity of 80 was obtained by optimizing pH and citric acid, hydrogen peroxide ratio.The etch stop mechanism was investigated using X-ray photoelectron spectroscopy(XPS).The etch stop ad AlGaAs could be due to Al_2O_3 formation,indicating more amount of Al_2O_3 on the selective etched AlGaAs surface than that on non-selective etched AlGaAs surface.This highly selective etching technology is very useful for the fabrication process of GaAs/AlGaAs heterojunction field-effect transistors. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Hetero junction tield-effect transistors / AlGaAs / Selective etching / Citric acid / pH |
| Paper # | ED93-99 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1993/10/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Highly selective etching of GaAs/AlGaAs hetero structures with citric acid-based etchats. |
| Sub Title (in English) | |
| Keyword(1) | Hetero junction tield-effect transistors |
| Keyword(2) | AlGaAs |
| Keyword(3) | Selective etching |
| Keyword(4) | Citric acid |
| Keyword(5) | pH |
| 1st Author's Name | Toshiaki Kitano |
| 1st Author's Affiliation | Optoelectronic and Micrwave Devices Laboratory,Mitsubishi Electric Corporation() |
| 2nd Author's Name | Shigekazu Izumi |
| 2nd Author's Affiliation | Optoelectronic and Micrwave Devices Laboratory,Mitsubishi Electric Corporation |
| 3rd Author's Name | Yoshito Seiwa |
| 3rd Author's Affiliation | Optoelectronic and Micrwave Devices Laboratory,Mitsubishi Electric Corporation |
| 4th Author's Name | Hirozou Takano |
| 4th Author's Affiliation | Optoelectronic and Micrwave Devices Laboratory,Mitsubishi Electric Corporation |
| Date | 1993/10/21 |
| Paper # | ED93-99 |
| Volume (vol) | vol.93 |
| Number (no) | 285 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |