| Presentation | 1993/9/17 The numerical analysis of the sheet electron density dependent mobility in n-GaAs heavily doped channels Yasuyuki Ohkura, Hiroshi Mizuta, Isao Ohbu, Osamu Kagaya, Kozo Katayama, Shigeo Ihara, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Low field electron transport properties in heavily-doped n-GaAs channels at 300K are investigated by Monte Carlo simulation.The matrix element for electron-impurity scattering is obtained from the Fourier-transformed Coulomb potential accounting for the screening effects of the two-dimensional electron gas.Electron mobility is calculated for several values of sheet electron density and n-GaAs thickness.For low electron density,the calculated mobility increases with the sheet electron density,and is almost independent of n-GaAs thickness.For high electron density,the mobility approaches a constant value.These findings are explained as a transition from two- to three-dimensional nature for the first time,and well confirmed by our experiments. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | heavily-doped n-GaAs channels / Monte Carlo / electron mobility / impurity scattering / two-dimensional electron gas |
| Paper # | ED93-95,SDM93-109,VLD93-50 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1993/9/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The numerical analysis of the sheet electron density dependent mobility in n-GaAs heavily doped channels |
| Sub Title (in English) | |
| Keyword(1) | heavily-doped n-GaAs channels |
| Keyword(2) | Monte Carlo |
| Keyword(3) | electron mobility |
| Keyword(4) | impurity scattering |
| Keyword(5) | two-dimensional electron gas |
| 1st Author's Name | Yasuyuki Ohkura |
| 1st Author's Affiliation | Central Research Laboratory,Hitachi Ltd() |
| 2nd Author's Name | Hiroshi Mizuta |
| 2nd Author's Affiliation | Central Research Laboratory,Hitachi Ltd |
| 3rd Author's Name | Isao Ohbu |
| 3rd Author's Affiliation | Central Research Laboratory,Hitachi Ltd |
| 4th Author's Name | Osamu Kagaya |
| 4th Author's Affiliation | Central Research Laboratory,Hitachi Ltd |
| 5th Author's Name | Kozo Katayama |
| 5th Author's Affiliation | Central Research Laboratory,Hitachi Ltd |
| 6th Author's Name | Shigeo Ihara |
| 6th Author's Affiliation | Central Research Laboratory,Hitachi Ltd |
| Date | 1993/9/17 |
| Paper # | ED93-95,SDM93-109,VLD93-50 |
| Volume (vol) | vol.93 |
| Number (no) | 217 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |