Presentation 1993/9/17
Two-dimensional simulation of resonant tunneling transistor using guantum distributed model
Hideaki Taniyama, Masaaki Tomizawa, Akira Yoshii,
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Abstract(in English) To include the two-dimensional potential distribution,which is thought to be important in transistor characteristics,we improve a coupling model of a classical and quantum mechanical calculations. A reduction of time is achieved by a quantum distributed model, which we propose.By using this model,we analyze the dependency of the transistor characteristics on an internal resistance and scatterings.Through the calculation,we show the efficency of the models.
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Keyword(in English) distributed model / resonant tunneling transistor / two- dimensional simulation / self-consistent
Paper # ED93-93,SDM93-107,VLD93-48
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Committee ED
Conference Date 1993/9/17(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Two-dimensional simulation of resonant tunneling transistor using guantum distributed model
Sub Title (in English)
Keyword(1) distributed model
Keyword(2) resonant tunneling transistor
Keyword(3) two- dimensional simulation
Keyword(4) self-consistent
1st Author's Name Hideaki Taniyama
1st Author's Affiliation NTT LSI Laboratories()
2nd Author's Name Masaaki Tomizawa
2nd Author's Affiliation NTT LSI Laboratories
3rd Author's Name Akira Yoshii
3rd Author's Affiliation NTT LSI Laboratories
Date 1993/9/17
Paper # ED93-93,SDM93-107,VLD93-48
Volume (vol) vol.93
Number (no) 217
Page pp.pp.-
#Pages 8
Date of Issue