Presentation | 1993/9/17 Two-dimensional simulation of resonant tunneling transistor using guantum distributed model Hideaki Taniyama, Masaaki Tomizawa, Akira Yoshii, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | To include the two-dimensional potential distribution,which is thought to be important in transistor characteristics,we improve a coupling model of a classical and quantum mechanical calculations. A reduction of time is achieved by a quantum distributed model, which we propose.By using this model,we analyze the dependency of the transistor characteristics on an internal resistance and scatterings.Through the calculation,we show the efficency of the models. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | distributed model / resonant tunneling transistor / two- dimensional simulation / self-consistent |
Paper # | ED93-93,SDM93-107,VLD93-48 |
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Committee | ED |
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Conference Date | 1993/9/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Two-dimensional simulation of resonant tunneling transistor using guantum distributed model |
Sub Title (in English) | |
Keyword(1) | distributed model |
Keyword(2) | resonant tunneling transistor |
Keyword(3) | two- dimensional simulation |
Keyword(4) | self-consistent |
1st Author's Name | Hideaki Taniyama |
1st Author's Affiliation | NTT LSI Laboratories() |
2nd Author's Name | Masaaki Tomizawa |
2nd Author's Affiliation | NTT LSI Laboratories |
3rd Author's Name | Akira Yoshii |
3rd Author's Affiliation | NTT LSI Laboratories |
Date | 1993/9/17 |
Paper # | ED93-93,SDM93-107,VLD93-48 |
Volume (vol) | vol.93 |
Number (no) | 217 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |