Presentation 1993/9/17
Carrier-Blocking Effects in HBTs with Insulating External Conectors and Design Criteria for Conector-up HBTs
Akio Nakatani, Kazushige Horio,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Two-dimensional simulations of cutoff frequencies for AlGaAs, GaAs HBTs with an ideally insulating external collector are made, and the results are compared with those for a case with a semi- insulating external collector and for a case with a normal n^- external collector.It is found that in a case with an ideally insulating external collector,minority carriers injected into the base from the emitter are partially blocked by the insulating layer and accumulate in the external base layer.These carriers increase the effective base delay time,resulting in a remarkable degradation of the cutoff frequency.In relation to this effect, collector-up,HBTs are also simulated,and the design criteria for them are discussed.It is concluded that the effective emitter width should be narrower than the collector width.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) HBT / GaAs / Insulating External Collector / Cutoff Frequency / Carrier-Blocking / Device Simulation
Paper # ED93-92,SDM93-106,VLD93-47
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Committee ED
Conference Date 1993/9/17(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Carrier-Blocking Effects in HBTs with Insulating External Conectors and Design Criteria for Conector-up HBTs
Sub Title (in English)
Keyword(1) HBT
Keyword(2) GaAs
Keyword(3) Insulating External Collector
Keyword(4) Cutoff Frequency
Keyword(5) Carrier-Blocking
Keyword(6) Device Simulation
1st Author's Name Akio Nakatani
1st Author's Affiliation Shibaura Institute of Technology()
2nd Author's Name Kazushige Horio
2nd Author's Affiliation Shibaura Institute of Technology
Date 1993/9/17
Paper # ED93-92,SDM93-106,VLD93-47
Volume (vol) vol.93
Number (no) 217
Page pp.pp.-
#Pages 6
Date of Issue