| Presentation | 1993/9/17 Analysis of degrading mechanisms at high current densities in highly scaled SiGe-base HBT′s. Mamoru Ugajin, Hong Ghy-Boong, Jerry Fossum, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Degrading effects on BJT speed performance due to current- induced perturbation of the collector-base junction space-charge region(SCR)are analyzed.Inverse base-width modulation(IBWM)-- a widening of the quasi-neutral base width -- and SCR-width widening(SCRW)in highly-scaled HBT′s are identified as important m echanisms goveming device speed degradation at high currents. Simulations and transit-time evaluations of a SiGe-base HBT show that the speed degradation associated with IBWM is predominant. Simulations of a further scaled device show that SCRW can be the significant mechanism of speed degradation at high current densities. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | cutoff frequency / BJT / SiGe / base transit time / space- charge region |
| Paper # | ED93-88,SDM93-102,VLD93-43 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1993/9/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of degrading mechanisms at high current densities in highly scaled SiGe-base HBT′s. |
| Sub Title (in English) | |
| Keyword(1) | cutoff frequency |
| Keyword(2) | BJT |
| Keyword(3) | SiGe |
| Keyword(4) | base transit time |
| Keyword(5) | space- charge region |
| 1st Author's Name | Mamoru Ugajin |
| 1st Author's Affiliation | NTT LSI Laboratories() |
| 2nd Author's Name | Hong Ghy-Boong |
| 2nd Author's Affiliation | Department of Electrical Engineering,University of Florida |
| 3rd Author's Name | Jerry Fossum |
| 3rd Author's Affiliation | Department of Electrical Engineering,University of Florida |
| Date | 1993/9/17 |
| Paper # | ED93-88,SDM93-102,VLD93-43 |
| Volume (vol) | vol.93 |
| Number (no) | 217 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |