Presentation | 1993/9/17 Unified physical models for device simulation of MOSFET′s and BJT′ s Naoyuki Shigyo, Noritoshi Konishi, Kazumi Nishinohara, Hiroyoshi Tanimoto, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Unified physical models for mobility,bandgap narrowing and intrinsic carrier concentration,have been developed.A unified mobility model accounted for surface roughness scattering and screened Coulomb scattering in addition to phonon scattering. Simulated MOSFET and BJT characteristics using the proposed models, revealed sufficient agreements with measurements. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | device simulation / mobility / bandgap narrowing / intrinsic carrier concentration |
Paper # | ED93-87,SDM93-101,VLD93-42 |
Date of Issue |
Conference Information | |
Committee | ED |
---|---|
Conference Date | 1993/9/17(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electron Devices (ED) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Unified physical models for device simulation of MOSFET′s and BJT′ s |
Sub Title (in English) | |
Keyword(1) | device simulation |
Keyword(2) | mobility |
Keyword(3) | bandgap narrowing |
Keyword(4) | intrinsic carrier concentration |
1st Author's Name | Naoyuki Shigyo |
1st Author's Affiliation | Toshiba() |
2nd Author's Name | Noritoshi Konishi |
2nd Author's Affiliation | Toshiba |
3rd Author's Name | Kazumi Nishinohara |
3rd Author's Affiliation | Toshiba |
4th Author's Name | Hiroyoshi Tanimoto |
4th Author's Affiliation | Toshiba |
Date | 1993/9/17 |
Paper # | ED93-87,SDM93-101,VLD93-42 |
Volume (vol) | vol.93 |
Number (no) | 217 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |