Presentation 1993/9/17
Unified physical models for device simulation of MOSFET′s and BJT′ s
Naoyuki Shigyo, Noritoshi Konishi, Kazumi Nishinohara, Hiroyoshi Tanimoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Unified physical models for mobility,bandgap narrowing and intrinsic carrier concentration,have been developed.A unified mobility model accounted for surface roughness scattering and screened Coulomb scattering in addition to phonon scattering. Simulated MOSFET and BJT characteristics using the proposed models, revealed sufficient agreements with measurements.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) device simulation / mobility / bandgap narrowing / intrinsic carrier concentration
Paper # ED93-87,SDM93-101,VLD93-42
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Committee ED
Conference Date 1993/9/17(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Unified physical models for device simulation of MOSFET′s and BJT′ s
Sub Title (in English)
Keyword(1) device simulation
Keyword(2) mobility
Keyword(3) bandgap narrowing
Keyword(4) intrinsic carrier concentration
1st Author's Name Naoyuki Shigyo
1st Author's Affiliation Toshiba()
2nd Author's Name Noritoshi Konishi
2nd Author's Affiliation Toshiba
3rd Author's Name Kazumi Nishinohara
3rd Author's Affiliation Toshiba
4th Author's Name Hiroyoshi Tanimoto
4th Author's Affiliation Toshiba
Date 1993/9/17
Paper # ED93-87,SDM93-101,VLD93-42
Volume (vol) vol.93
Number (no) 217
Page pp.pp.-
#Pages 8
Date of Issue