| Presentation | 1995/10/20 InP-based Resonant Tunneling Diode with a Cathode-Well Structure Takayuki Nakagawa, Takaya Nakano, Kanji Yoh, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InGaAs/AlAs/InAs resonant tunneling diodes (RTDs) with a cathode well have been fabricated to investigate the effacts of inserting a cathode well to RTD. Peak-to-valley ratio of 7.7 and the peak current density of 6.4×10^4 A/cm^2 were obtained in the RTDs with a cathode well, which are higher than the data of RTDs without a cathode well by a factor of 3.5 and 3, respectively. These improvements are presumably due to the formation of higher peak distribution density of electrons confined in a cathode well. The width of the resonance level was estimated to be 46 meV in both RTD structures by the analysis of current-voltage characteristics. This result confirms that the observed improvements of electric characteristics are due to two-dimensional electron density distribution. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | cathode-well / resonant tunneling diode / electron density distribution / InAs |
| Paper # | ED95-115 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1995/10/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | InP-based Resonant Tunneling Diode with a Cathode-Well Structure |
| Sub Title (in English) | |
| Keyword(1) | cathode-well |
| Keyword(2) | resonant tunneling diode |
| Keyword(3) | electron density distribution |
| Keyword(4) | InAs |
| 1st Author's Name | Takayuki Nakagawa |
| 1st Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Takaya Nakano |
| 2nd Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Kanji Yoh |
| 3rd Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| Date | 1995/10/20 |
| Paper # | ED95-115 |
| Volume (vol) | vol.95 |
| Number (no) | 315 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |