| Presentation | 1995/10/20 Single Voltage Supply High Efficiency InGaAs Pseudomorphic Double-Hetero HEMTs with Platinum Buried Gates Takuma Tanimoto, Isao Ohbu, Satoshi Tanaka, Hidetoshi Matsumoto, Akihisa Terano, M. Kudo, Tohru Nakamura, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High efficiency HEMTs for high power linear amplifiers with single biasing supply are demonstrated. In these devices, high reliability Platinum buried gates have been adopted to obtain higher Shottoky barrier height of 0.9 eV for single voltage supply. Double-Hetero structure has been adopted for linearity and large gain. GaAs/InGaAs/GaAs superlattice channel has also been adopted for higher electron mobility of 6300 cm^2/Vs for high sheet carrier concentration of 3.6×10<12> cm^<-2>. By using these technologies, high output power of 1.5 W and high power and efficiency of 41% are obtained for 1.5GHz Personal Digital Cellular(PDC) conditions with +3 V single voltage supply. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Single voltage supply / HEMT / Pseudomorphic / Double hetero / Pt buried gate |
| Paper # | ED95-107 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1995/10/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Single Voltage Supply High Efficiency InGaAs Pseudomorphic Double-Hetero HEMTs with Platinum Buried Gates |
| Sub Title (in English) | |
| Keyword(1) | Single voltage supply |
| Keyword(2) | HEMT |
| Keyword(3) | Pseudomorphic |
| Keyword(4) | Double hetero |
| Keyword(5) | Pt buried gate |
| 1st Author's Name | Takuma Tanimoto |
| 1st Author's Affiliation | Central Research Laboratory, Hitachi Ltd.() |
| 2nd Author's Name | Isao Ohbu |
| 2nd Author's Affiliation | Central Research Laboratory, Hitachi Ltd. |
| 3rd Author's Name | Satoshi Tanaka |
| 3rd Author's Affiliation | Central Research Laboratory, Hitachi Ltd. |
| 4th Author's Name | Hidetoshi Matsumoto |
| 4th Author's Affiliation | Central Research Laboratory, Hitachi Ltd. |
| 5th Author's Name | Akihisa Terano |
| 5th Author's Affiliation | Central Research Laboratory, Hitachi Ltd. |
| 6th Author's Name | M. Kudo |
| 6th Author's Affiliation | Central Research Laboratory, Hitachi Ltd. |
| 7th Author's Name | Tohru Nakamura |
| 7th Author's Affiliation | Central Research Laboratory, Hitachi Ltd. |
| Date | 1995/10/20 |
| Paper # | ED95-107 |
| Volume (vol) | vol.95 |
| Number (no) | 315 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |