Presentation	1996/1/18 A GaAs Direct-Conversion 1/4π shifted QPSK Modulator IC with 0-28 dB variable Attenuator for 1.9 GHz Personal Handy Phone System ,
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Abstract(in English)	We have developed a GaAs direct-conversion 1/4π shifted QPSK modulator IC equipped with variable attenuators for controlling the output power level of the 1.9 GHz Personal Handy Phone (PHS) system. The IC was successfully demonstrated showing state-of-the-art performance with the image rejection ratio of more than 36 dBc at an input low power of -10 dBm in the 1.9 GHz frequency range. By using the "Gate Current Control method by Pull-down FET's" (GCCPF), the equipped attenuators vary the output power from 0 dB to -28 dB by 4 dB step. The IC operates at a 2.7 V supply with the power dissipation of 259 mW. The 2.6 x 4.6 mm^2 chip with about 400 elements was fabricated by a 0.5 mm WN_x-gate BPLDD GaAs MESFET process.
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Paper #	ED95-163,MW95-148,ICD95-219
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Conference Information
Committee	ED
Conference Date	1996/1/18(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	JPN
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Title (in English)	A GaAs Direct-Conversion 1/4π shifted QPSK Modulator IC with 0-28 dB variable Attenuator for 1.9 GHz Personal Handy Phone System
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Date	1996/1/18
Paper #	ED95-163,MW95-148,ICD95-219
Volume (vol)	vol.95
Number (no)	449
Page	pp.pp.-
#Pages	6
Date of Issue