| Presentation | 1996/1/18 Ultra-High-Speed InP/InGaAs Double Heterojunction Bipolar Transistors with a New Hexagonal-Shaped Emitter S Yamahata, K Kurishima, N Shigekawa, H Ito, Y Matsuoka, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Superior high-frequency characteristics with peak f_T of 228 GHz and f_max of 227 GHz are demonstrated for the self-aligned InP/InGaAs double-heterojunction bipolar transistor (DHBT) with a novel collection structure and a new hexagonal emitter electrode geometry. These improvements in f_T and f_max are due to the thickness optimization of the base and collector layers and the reduction of parasitic base resistance and base/collector capacitance through the use of the new emitter geometry. Moreover, we can obtain higher f_max of over 300 GHz due to the thicker undoped InGaAs collector layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP/InGaAs DHBT / Self-aligned Process / Hexagonal-Shaped Emitter |
| Paper # | ED95-155,MW95-140,ICD95-211 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/1/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ultra-High-Speed InP/InGaAs Double Heterojunction Bipolar Transistors with a New Hexagonal-Shaped Emitter |
| Sub Title (in English) | |
| Keyword(1) | InP/InGaAs DHBT |
| Keyword(2) | Self-aligned Process |
| Keyword(3) | Hexagonal-Shaped Emitter |
| 1st Author's Name | S Yamahata |
| 1st Author's Affiliation | NTT LSI Laboratories() |
| 2nd Author's Name | K Kurishima |
| 2nd Author's Affiliation | NTT LSI Laboratories |
| 3rd Author's Name | N Shigekawa |
| 3rd Author's Affiliation | NTT LSI Laboratories |
| 4th Author's Name | H Ito |
| 4th Author's Affiliation | NTT LSI Laboratories |
| 5th Author's Name | Y Matsuoka |
| 5th Author's Affiliation | Opto-electronics Laboratories |
| Date | 1996/1/18 |
| Paper # | ED95-155,MW95-140,ICD95-211 |
| Volume (vol) | vol.95 |
| Number (no) | 449 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |