| Presentation | 1996/1/18 Development of Graded-GaAsP Bases in Heterojunction Bipolar Transistors N lkeda, M Ohkubo, T Ninomiya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | First fabrication of the strained graded-GaAsP base HBTs with InGaP emitters was successfully demonstrated. It was confirmed that heavily carbon-doping into MOCVD grown GaAsP layer, as well as GaAs, was applicable to base layer. Compared to the uniform-GaAs base HBTs, it was also confirmed that, for the GaAsP/GaAs system, ΔE_v/ ΔE_G ratio was about more than 0.5, which was derived from the Gummel plot of collector current. Furthermore, both of current-gain and cutoff frequency(f_T) enhancement due to built-in field compared with the uniform-base HBTs was confirmed. Current-gain enhancement factor was found to be strongly dependent on amount of strain. By extracting the base transit time reduction in the graded base structure, average velocity in the base is calculated for the graded base HBT. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaP/GaAsP HBT / graded-base / base transit time |
| Paper # | ED95-154,MW95-139,ICD95-210 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/1/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of Graded-GaAsP Bases in Heterojunction Bipolar Transistors |
| Sub Title (in English) | |
| Keyword(1) | InGaP/GaAsP HBT |
| Keyword(2) | graded-base |
| Keyword(3) | base transit time |
| 1st Author's Name | N lkeda |
| 1st Author's Affiliation | The Furukawa Electric Co. Ltd., Yokohama laboratories() |
| 2nd Author's Name | M Ohkubo |
| 2nd Author's Affiliation | The Furukawa Electric Co. Ltd., Yokohama laboratories |
| 3rd Author's Name | T Ninomiya |
| 3rd Author's Affiliation | The Furukawa Electric Co. Ltd., Yokohama laboratories |
| Date | 1996/1/18 |
| Paper # | ED95-154,MW95-139,ICD95-210 |
| Volume (vol) | vol.95 |
| Number (no) | 449 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |