| Presentation | 1996/1/18 Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors Shigeharu Matsushita, Emi Fujii, Daijiro Inoue, Seiichi Banba, Kohji Matsumura, Minoru Sawada, Yasoo Harada, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrate for the first time that the decrease in the carrier concentration of highly doped GaAs layers caused by annealing is alleviated by thinning the layers. It is also suggested that the decrease is dependent on the Fermi level in the doped layers. Thermally stable channels are formed in implanted planar-type two-mode channel field-effect transistors. A 0.2 μm device having a GaAs channel 9 nm thick with a doping level of 7x10^<18> cm<-3> exhibits excellent performance, such as a transconductance gm of 450 mS/mm, a current-gain cutoff frequency f_T of 72 GHz, and a maximum frequency of oscillation fmax of 140 GHz. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | heterojunction FET / annealing / thermal stability / MBE / Fermi level |
| Paper # | ED95-152,MW95-137,ICD95-208 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/1/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors |
| Sub Title (in English) | |
| Keyword(1) | heterojunction FET |
| Keyword(2) | annealing |
| Keyword(3) | thermal stability |
| Keyword(4) | MBE |
| Keyword(5) | Fermi level |
| 1st Author's Name | Shigeharu Matsushita |
| 1st Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd.,() |
| 2nd Author's Name | Emi Fujii |
| 2nd Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd., |
| 3rd Author's Name | Daijiro Inoue |
| 3rd Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd., |
| 4th Author's Name | Seiichi Banba |
| 4th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd., |
| 5th Author's Name | Kohji Matsumura |
| 5th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd., |
| 6th Author's Name | Minoru Sawada |
| 6th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd., |
| 7th Author's Name | Yasoo Harada |
| 7th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd., |
| Date | 1996/1/18 |
| Paper # | ED95-152,MW95-137,ICD95-208 |
| Volume (vol) | vol.95 |
| Number (no) | 449 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |