| Presentation | 1996/1/18 Novel sub-quarter micron GaAs MESFET process with WSi sidewall gate Tomoya Uda, Mitsuru Nishitsuji, Katsunori Nishii, Kazuhisa Fujimoto, Akiyoshi Tamura, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed a novel sub-quarter micron WSi sidewall gate GaAs MESFET (SIG-FET) fabrication process. In this process, using WSi sidewalls as gate electrodes, the gate length is controlled only by the thickness of a WSi thin film deposited by sputtering and sub-quarter micron gates can be easily fabricated without using photo-lithography. The 0.15-μm-gate SIG-FET has exhibited f = 50 GHz and fmax = 120 GHz.This novel process technology is very promising for fabricating high-performance sub-quarter micron gate MESFET's with low costs and high throughput. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | sub-quarter micron GaAs MESFET / WSi sidewall / sidewall gate / ft / fmax |
| Paper # | ED95-151,MW95-136,ICD95-207 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1996/1/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Novel sub-quarter micron GaAs MESFET process with WSi sidewall gate |
| Sub Title (in English) | |
| Keyword(1) | sub-quarter micron GaAs MESFET |
| Keyword(2) | WSi sidewall |
| Keyword(3) | sidewall gate |
| Keyword(4) | ft |
| Keyword(5) | fmax |
| 1st Author's Name | Tomoya Uda |
| 1st Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation() |
| 2nd Author's Name | Mitsuru Nishitsuji |
| 2nd Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation |
| 3rd Author's Name | Katsunori Nishii |
| 3rd Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation |
| 4th Author's Name | Kazuhisa Fujimoto |
| 4th Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation |
| 5th Author's Name | Akiyoshi Tamura |
| 5th Author's Affiliation | Electronics Research Laboratory, Matsushita Electronics Corporation |
| Date | 1996/1/18 |
| Paper # | ED95-151,MW95-136,ICD95-207 |
| Volume (vol) | vol.95 |
| Number (no) | 449 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |