Presentation | 1996/1/17 A PROSPECT OF mm-WAVE SEMICONDUCTOR Asamitsu HIGASHISAKA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In recent years, research and development activities of mm-wave application technologies have been enhanced from view points of both the effective-use of the frequency resource and the ultra-high speed data/video communication applications. This paper starts with an overview of today' s and future applications of mm-wave band points out the needs for mm-wave devices. Then a state-of-the-art on current mm-wave devices (GaAsHEMT, InP HEMT,HBT), as well as, an example of the practical GaAs MMIC development is presented. After that, it discusses the technical barriers to be solved toward the mm-wave applications, and introduces the efforts against the barrier. In conclusion, mm-wave device technologies are improving steadily, realizing the mm-wave society in the near future. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | mm-wave / GaAs / InP / HEMT / HBT / MMIC / MIC |
Paper # | ED95-149,MW95-134,ICD95-205 |
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Conference Information | |
Committee | ED |
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Conference Date | 1996/1/17(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A PROSPECT OF mm-WAVE SEMICONDUCTOR |
Sub Title (in English) | |
Keyword(1) | mm-wave |
Keyword(2) | GaAs |
Keyword(3) | InP |
Keyword(4) | HEMT |
Keyword(5) | HBT |
Keyword(6) | MMIC |
Keyword(7) | MIC |
1st Author's Name | Asamitsu HIGASHISAKA |
1st Author's Affiliation | ULSI DEVICE DEVELOPMENT LABOLATORIES, NEC Corporation() |
Date | 1996/1/17 |
Paper # | ED95-149,MW95-134,ICD95-205 |
Volume (vol) | vol.95 |
Number (no) | 448 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |