Presentation 1996/1/17
A PROSPECT OF mm-WAVE SEMICONDUCTOR
Asamitsu HIGASHISAKA,
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Abstract(in English) In recent years, research and development activities of mm-wave application technologies have been enhanced from view points of both the effective-use of the frequency resource and the ultra-high speed data/video communication applications. This paper starts with an overview of today' s and future applications of mm-wave band points out the needs for mm-wave devices. Then a state-of-the-art on current mm-wave devices (GaAsHEMT, InP HEMT,HBT), as well as, an example of the practical GaAs MMIC development is presented. After that, it discusses the technical barriers to be solved toward the mm-wave applications, and introduces the efforts against the barrier. In conclusion, mm-wave device technologies are improving steadily, realizing the mm-wave society in the near future.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) mm-wave / GaAs / InP / HEMT / HBT / MMIC / MIC
Paper # ED95-149,MW95-134,ICD95-205
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Committee ED
Conference Date 1996/1/17(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A PROSPECT OF mm-WAVE SEMICONDUCTOR
Sub Title (in English)
Keyword(1) mm-wave
Keyword(2) GaAs
Keyword(3) InP
Keyword(4) HEMT
Keyword(5) HBT
Keyword(6) MMIC
Keyword(7) MIC
1st Author's Name Asamitsu HIGASHISAKA
1st Author's Affiliation ULSI DEVICE DEVELOPMENT LABOLATORIES, NEC Corporation()
Date 1996/1/17
Paper # ED95-149,MW95-134,ICD95-205
Volume (vol) vol.95
Number (no) 448
Page pp.pp.-
#Pages 6
Date of Issue