| Presentation | 1996/1/17 InGaP/GaAs Power HBTs with a Low Bias Voltage S Ohara, H Yamada, T Iwai, Y Yamaguchi, K Imanishi, K Joshin, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes InGaP/GaAs heterojunction bipolar transistors (HBTs) for L-band power amplifiers with low bias voltage. The InGaP/GaAs HBT structure was grown by MOCVD on a semi-insulating GaAs substrate. A fabricated HBT with an emitter size of 2 μm × 20 μm × 64 fingers offers an output power, Pout, of 34.3 dBm and a power added efficiency, ηadd, of 57.7 % at 1.5 GHz with a collector bias of 3.5 V under class AB operation. The power HBT indicates an output power of over 31.7 dBm at a bias of as low as 2.5 V. Adjacent channel power leakage of the power HBT according to the Japanese standards of personal digital cellular phone (PDC) is -49 dBc when Pout is 31.4 dBm and ηadd is 50.3 % with collector bias of 3.5 V. This performance shows that InGaP/GaAs HBT is a useful device with a low bias voltage. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaP / HBT / L-band / power |
| Paper # | ED95-148,MW95-133,ICD95-204 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/1/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | InGaP/GaAs Power HBTs with a Low Bias Voltage |
| Sub Title (in English) | |
| Keyword(1) | InGaP |
| Keyword(2) | HBT |
| Keyword(3) | L-band |
| Keyword(4) | power |
| 1st Author's Name | S Ohara |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | H Yamada |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | T Iwai |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Y Yamaguchi |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | K Imanishi |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | K Joshin |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 1996/1/17 |
| Paper # | ED95-148,MW95-133,ICD95-204 |
| Volume (vol) | vol.95 |
| Number (no) | 448 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |