| Presentation | 1996/1/17 Millimeter-wave Power HBTs with Lateral p^+/p Base Contacts Yasushi Amamiya, Hidenori Shimawaki, Chang Woo Kim, Shin'ichi Tanaka, Seiichi Murakami, Naoki Furuhata, Masayuki Mamada, Norio Goto, Kazuhiko Honjo, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper reports a further examination of AlGaAs/IGaAs HBTs with lateral P^+/P regrown base contacts which do not need a delicate processing step of base layer exposure. Compared with planar-contact HBTs, the lateral-contact (LC) HBTs has three times larger leakage current which reflects the recombination at the regrowth interface. However, a current gain above 100 and an fmax above 200 GHz are obtained for the LC HBTs with 40nm-thick graded InGaAs strained base layers. The specific contact resistance at the regrowth interface is the order of 10^<-7>Ωcm^2 for the both type contacts. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HBT / p^+/p base contact / MOMBE selective regrowth / graded strained base layer / millimeter wave |
| Paper # | ED95-147,MW95-132,ICD95-203 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/1/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Millimeter-wave Power HBTs with Lateral p^+/p Base Contacts |
| Sub Title (in English) | |
| Keyword(1) | HBT |
| Keyword(2) | p^+/p base contact |
| Keyword(3) | MOMBE selective regrowth |
| Keyword(4) | graded strained base layer |
| Keyword(5) | millimeter wave |
| 1st Author's Name | Yasushi Amamiya |
| 1st Author's Affiliation | Microelectronics Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Hidenori Shimawaki |
| 2nd Author's Affiliation | Microelectronics Research Laboratories, NEC Corporation |
| 3rd Author's Name | Chang Woo Kim |
| 3rd Author's Affiliation | Microelectronics Research Laboratories, NEC Corporation |
| 4th Author's Name | Shin'ichi Tanaka |
| 4th Author's Affiliation | Microelectronics Research Laboratories, NEC Corporation |
| 5th Author's Name | Seiichi Murakami |
| 5th Author's Affiliation | Microelectronics Research Laboratories, NEC Corporation |
| 6th Author's Name | Naoki Furuhata |
| 6th Author's Affiliation | Microelectronics Research Laboratories, NEC Corporation |
| 7th Author's Name | Masayuki Mamada |
| 7th Author's Affiliation | Microelectronics Research Laboratories, NEC Corporation |
| 8th Author's Name | Norio Goto |
| 8th Author's Affiliation | Microelectronics Research Laboratories, NEC Corporation |
| 9th Author's Name | Kazuhiko Honjo |
| 9th Author's Affiliation | Microelectronics Research Laboratories, NEC Corporation |
| Date | 1996/1/17 |
| Paper # | ED95-147,MW95-132,ICD95-203 |
| Volume (vol) | vol.95 |
| Number (no) | 448 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |